Datasheet > NSVMMBTA28LT1G

NSVMMBTA28LT1G

更新时间： 2024-12-01 11:13:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管达林顿晶体管
页数	文件大小	规格书
7页	267K
描述
NPN 达林顿晶体管

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数据手册

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NSVMMBTA28LT1G 数据手册

DATA SHEET

www.onsemi.com

NPN Darlington Transistor

PZTA28, MMBTA28

MARKING DIAGRAM

AYW

A28

Description

SOT−223

CASE 318H

This device is designed for applications requiring extremely high

current gain at collector currents to 500 mA. Sourced from process 03.

A28

= Assembly Location

= Date Code

= Specific Device Code

Features

• These are Pb−Free Devices

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(Note 1, Note 2)

MARKING DIAGRAM

Symbol

Parameter

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Value

Unit

CEO

CBO

EBO

3SS M

SOT−23/SUPERSOT−23

CASE 527AG

Collector Current − Continuous

800

°C

3SS

= Specific Device Code

= Date Code

T , T

Operating and Storage Junction

Temperature Range

−55 to + 150

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady−state limits. onsemi should be consulted on applications

involving pulsed or low−duty−cycle operations.

†

Device

Package

Shipping

PZTA28

SOT−223

SOT−23

4000 / Tape & Reel

3000 / Tape & Reel

MMBTA28

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

October, 2021 − Rev. 2

PZTA28/D

12 3 4 5 6 7

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