NE6500379

更新时间： 2024-09-23 22:29:07

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	90K
描述
3W L, S-BAND POWER GaAs MESFET

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NE6500379 数据手册

DATA SHEET

N-CHANNEL GaAs MES FET

NE6500379A

3W L, S-BAND POWER GaAs MESFET

DESCRIPTION

The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile

communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high

linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s

stringent quality and control procedures.

FEATURES

•

High Output Power

High Linear Gain

: P^{o (1dB)}= +35 dBm typ.

: 10 dB typ.

High Power Added Efficiency: 50% typ. @V^DS= 6 V, I^Dset= 500 mA, f = 1.9 GHz

ORDERING INFORMATION

Part Number

Package

Supplying Form

NE6500379A-T1

79A

12 mm tape width, 1 kpcs/reel

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NE6500379A)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GSO

I^D

Ratings

Unit

–7

5.6

Gate Current

I^G

Total Power Dissipation

Channel Temperature

Storage Temperature

P^T

T^ch

150

°C

T^stg

–65 to +150

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice.

Document No. P13495EJ2V0DS00 (2nd edition)

Date Published August 1998 N CP(K)

Printed in Japan

The mark shows major revised points.

1998

12 3 4 5 6 7 8

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