Datasheet > NE650103M-A

NE650103M-A

更新时间： 2024-09-24 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
7页	223K
描述
10 W L & S-BAND POWER GaAs MESFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE650103M-A 数据手册

NEC'S 10 W L & S-BAND

POWER GaAs MESFET

NE650103M

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• LOW COST PLASTIC PACKAGE

PACKAGE OUTLINE 3M

• USABLE TO 2.7 GHz:

PCS, W-CDMA, WLL, Satellite Uplink, BWA

20.32 0.ꢀ1

ꢀ4.27 0.ꢀ1

• HIGH OUTPUT POWER:

40 dBm TYP

• HIGH POWER ADDED EFFICIENCY:

45 % TYP at 2.3 GHz

3.1 0.2

GATE

• LOW THERMAL RESISTANCE:

4.0° C/W

2-φ 3.3 0.3

• LEAD-FREE

DESCRIPTION

SOURCE

DRAIN

8.14 0.2

NEC's NE650103M is a 10 W GaAs MESFET designed for

PCS, W-CDMA, WLL transmitter applications. It is capable of

delivering 10 Watts of output power with high linear gain, high

efficiency and excellent linearity. Reliability and performance

uniformity are assured by NEC's stringent quality and control

procedures

0.ꢀ1 0.01

2.04 0.3

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

NE650103M

PACKAGE OUTLINE

SYMBOLS

CHARACTERISTICS

UNITS

MIN

TYP

MAX

TEST CONDITIONS

P1dB

Power Out at 1dB Gain Compression

dBm

39.0

40.0

f = 2.3 GHz, VDS = 10.0 V

Rg = 100 Ω

IDSQ ≤ 1.5 A (RF OFF)

ηADD

IDSS

Linear Gain (at Pin ≤ 23 dBm)

Power Added Efficiency

Saturated Drain Current

Pinch-Off Voltage

10.0

11.0

2.0

5.0

7.0

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; IDS = 23 mA

-4.0

-2.5

-1.0

RTH

Thermal Resistance

°C/W

4.0

4.5

Channel to Case

California Eastern Laboratories

12 3 4 5 6 7

中文翻译

下载PDF

与NE650103M-A相关器件

型号	品牌	获取价格	描述	数据表
NE6501077	NEC	获取价格	10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE6501077_00	CEL	获取价格	L/S BAND MEDIUM POWER GaAs MESFET
NE6501077-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
NE650N	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16,
NE650N-A	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16
NE650N-B	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16
NE650NSIIA	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16
NE650NSIIB	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16
NE650R279A	NEC	获取价格	0.2 W L, S-BAND POWER GaAs MES FET
NE650R279A-A	NEC	获取价格	暂无描述