NE6500496

更新时间： 2024-11-13 22:29:07

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	40K
描述
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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数据手册

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NE6500496 数据手册

PRELIMINARY DATA SHEET

GaAs MES FET

NE6500496

4 W L, S-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

PACKAGE DIMENSION (UNIT: mm)

DESCRIPTION

The NE6500496 is power GaAs FET which provides high

gain, high efficiency and high output power in L, S band.

To reduce thermal resistance, the device has a PHS

(Plated Heat Sink) structure.

1.0 ± 0.1

4.0 MIN BOTHLEADS

GATE

φ2.2 ±0.3

2 SLACES

SOURCE

FEATURES

4.3 ±0.2

4.0

•

Class A operation

High output power: 36 dBm (typ)

High gain: 11.5 dB (typ)

DRAIN

High power added efficiency: 45 % (typ)

Hermetically sealed ceramic package

0.6 ±0.1

5.2 ±0.3

11.0 ±0.3

15.0 ±0.3

0.1

0.2 MAX.

ABSOLUTE MAXIMUM RATINGS (T^A= 25 ˚C)

5.0 MAX.

Drain to Source Voltage

Gate to Drain Voltage

Gate to Source Voltage

Drain Current

VDSX

V^GDX

V^GSX

–18

1.7 ±0.15

6.0 ±0.2

1.2

–12

4.5

Gate Current

I^G

˚C

Total Power Dissipation

Channel Temperature

Storage Temperature

Temperature Cycling

P^T(*)

Tch

175

T^stg

T∞

–65 to +175

–40 to +120

* T^C= 25 ˚C

Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive

device.

Document No. P10971EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

12 3 4 5 6

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