是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | 79A, 4 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.65 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 6 V |
最大漏极电流 (ID): | 0.6 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | S BAND | JESD-30 代码: | R-XQMW-F4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | MICROWAVE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE650R479A-T1 | NEC |
获取价格 |
0.4 W L, S-BAND POWER GaAs MES FET |
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NE650R479A-T1-A | NEC |
获取价格 |
暂无描述 |
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NE6510179 | CEL |
获取价格 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET |
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NE6510179A | CEL |
获取价格 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET |
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NE6510179A | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-j |
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NE6510179A-A | CEL |
获取价格 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET |
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NE6510179A-T1 | CEL |
获取价格 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET |
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NE6510179A-T1-A | CEL |
获取价格 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET |
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NE6510179A-TI | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction |
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NE6510379A | NEC |
获取价格 |
3 W L-BAND POWER GaAs HJ-FET |
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