Datasheet > 晶体管 > 射频小信号场效应晶体管> NE651R479A

NE651R479A

更新时间： 2024-01-11 08:09:19

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数	文件大小	规格书
8页	71K
描述
0.4 W L-BAND POWER GaAs HJ-FET

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中文翻译

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技术参数
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NE651R479A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	FET 技术：	JUNCTION
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2.5 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

NE651R479A 数据手册

DATA SHEET

N-CHANNEL GaAs HJ-FET

NE651R479A

0.4 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile

communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear

gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

•

GaAs HJ-FET structure

High output power

: P^out= +27.0 dBm TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 900 MHz, Pⁱⁿ= +13 dBm

P^out= +27.0 dBm TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= +15 dBm

P^out= +29.5 dBm TYP. @ V^DS= 5.0 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= +15 dBm

: G^L= 14.0 dB TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 900 MHz, Pⁱⁿ= 0 dBm

G^L= 12.0 dB TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= 0 dBm

G^L= 12.0 dB TYP. @ V^DS= 5.0 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= 0 dBm

•

High linear gain

High power added efficiency : 60 % TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 900 MHz, Pⁱⁿ= +13 dBm

60 % TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= +15 dBm

58 % TYP. @ V^DS= 5.0 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= +15 dBm

ORDERING INFORMATION

Part Number

Package

79A

Supplying Form

NE651R479A-T1

• 12 mm wide embossed taping

• Qty 1 kpcs/reel

Remark To order evaluation samples, consult your NEC sales representative

(Part number for sample order: NE651R479A).

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P13670EJ2V0DS00 (2nd edition)

Date Published June 2000 NS CP(K)

The mark • shows major revised points.

1998, 2000

Printed in Japan

12 3 4 5 6 7 8

中文翻译

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与NE651R479A相关器件

型号	品牌	获取价格	描述	数据表
NE651R479A-A	CEL	获取价格	MEDIUM POWER GaAs HJ-FET
NE651R479A-T1	NEC	获取价格	0.4 W L-BAND POWER GaAs HJ-FET
NE651R479A-T1-A	CEL	获取价格	MEDIUM POWER GaAs HJ-FET
NE661M04	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04-T2-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,3.3V V(BR)CEO,12MA I(C),SOT-343VAR
NE661M05	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU

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