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NE662M03-FB PDF预览

NE662M03-FB

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
10页 62K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

NE662M03-FB 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.18外壳连接:COLLECTOR
最大集电极电流 (IC):0.035 A基于收集器的最大容量:0.3 pF
集电极-发射极最大电压:3.3 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-F3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):21000 MHzBase Number Matches:1

NE662M03-FB 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
NE662M03  
NPN SILICON RF TRANSISTOR FOR  
LOW NOISE HIGH-GAIN AMPLIFICATION  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Ideal for low noise high-gain amplification and high-frequency oscillation  
NF = 1.2 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz  
MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz  
S21e 2 = 12.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz  
fT = 21 GHz TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz  
Flat-lead 3-pin thin-type ultra super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
NE662M03  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (Collector) face the perforation side of the tape  
NE662M03-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
15  
3.3  
V
1.5  
V
35  
mA  
mW  
°C  
°C  
P
tot Note  
115  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10324EJ02V0DS (2nd edition)  
Date Published May 2003 CP(K)  
The mark shows major revised points.  
Printed in Japan  
NEC Compound Semiconductor Devices 2002, 2003  

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