Datasheet > 晶体管 > 射频小信号场效应晶体管> NE651R479A-T1

NE651R479A-T1

更新时间： 2024-11-13 22:10:19

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数	文件大小	规格书
8页	71K
描述
0.4 W L-BAND POWER GaAs HJ-FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NE651R479A-T1 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC, 79A, 4 PIN
Reach Compliance Code：	unknown	风险等级：	5.83
其他特性：	HIGH RELIABILITY	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	8 V
最大漏极电流 (ID)：	1 A	FET 技术：	HETERO-JUNCTION
最高频带：	S BAND	JESD-30 代码：	R-PQMW-F4
元件数量：	1	端子数量：	4
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	MICROWAVE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	QUAD	晶体管应用：	AMPLIFIER
晶体管元件材料：	GALLIUM ARSENIDE	Base Number Matches：	1

NE651R479A-T1 数据手册

DATA SHEET

N-CHANNEL GaAs HJ-FET

NE651R479A

0.4 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile

communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear

gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

•

GaAs HJ-FET structure

High output power

: P^out= +27.0 dBm TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 900 MHz, Pⁱⁿ= +13 dBm

P^out= +27.0 dBm TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= +15 dBm

P^out= +29.5 dBm TYP. @ V^DS= 5.0 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= +15 dBm

: G^L= 14.0 dB TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 900 MHz, Pⁱⁿ= 0 dBm

G^L= 12.0 dB TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= 0 dBm

G^L= 12.0 dB TYP. @ V^DS= 5.0 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= 0 dBm

•

High linear gain

High power added efficiency : 60 % TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 900 MHz, Pⁱⁿ= +13 dBm

60 % TYP. @ V^DS= 3.5 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= +15 dBm

58 % TYP. @ V^DS= 5.0 V, I^Dset= 50 mA, f = 1.9 GHz, Pⁱⁿ= +15 dBm

ORDERING INFORMATION

Part Number

Package

79A

Supplying Form

NE651R479A-T1

• 12 mm wide embossed taping

• Qty 1 kpcs/reel

Remark To order evaluation samples, consult your NEC sales representative

(Part number for sample order: NE651R479A).

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P13670EJ2V0DS00 (2nd edition)

Date Published June 2000 NS CP(K)

The mark • shows major revised points.

1998, 2000

Printed in Japan

12 3 4 5 6 7 8

中文翻译

下载PDF

与NE651R479A-T1相关器件

型号	品牌	获取价格	描述	数据表
NE651R479A-T1-A	CEL	获取价格	MEDIUM POWER GaAs HJ-FET
NE661M04	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04-T2-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,3.3V V(BR)CEO,12MA I(C),SOT-343VAR
NE661M05	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU
NE661M05FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU

与NE651R479A-T1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

5
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

NE651R479A-T1

NE651R479A-T1 技术参数

NE651R479A-T1 数据手册

与NE651R479A-T1相关器件

与NE651R479A-T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NE651R479A-T1

NE651R479A-T1 技术参数

NE651R479A-T1 数据手册

与NE651R479A-T1相关器件

与NE651R479A-T1相关文章

您还可以找

您在本页遇到什么问题？