Datasheet > NE662M04

NE662M04

更新时间： 2024-11-14 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
11页	384K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE662M04 数据手册

NPN SILICON RF TRANSISTOR

NE662M04

NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

•

HIGH GAIN BANDWIDTH: fT = 25 GHz

LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz

NEW LOW PROFILE M04 PACKAGE:

• SOT-343 footprint, with a height of just 0.59 mm

• Flat Lead Style for better RF performance

M04

DESCRIPTION

NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the

NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current

performance.

NEC'snewlowprofile/flatleadstyle"M04"packageisidealfortoday'sportablewirelessapplications.TheNE662M04isanidealchoice

for LNA and oscillator requirements in all mobile communication systems.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE662M04

2SC5508

M04

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

200

100

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

Forward Current Gain²at VCE = 2 V, IC = 5 mA

1.1

Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz

Maximum Available Power Gain⁴at VCE = 2 V, IC = 20 mA, f = 2 GHz

Maximum Stable Gain⁵at VCE = 2 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT

GHz

MAG

MSG

|S21E|²

1.5

P1dB

Output Power at 1 dB compression point at

VCE = 2 V, IC = 20 mA, f = 2 GHz

dBm

IP3

Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance³at VCB = 2 V, IC = 0, f = 1 MHz

Cre

0.18

0.24

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

S21

S12

(^{K- (K}²^-1))

4. MAG =

S21

S12

5. MSG =

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 22, 2005

12 3 4 5 6 7...11

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