5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 射频小信号双极晶体管> NE664M04-T2
NE664M04-T2 PDF预览

NE664M04-T2

更新时间： 2024-11-13 22:45:23
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
9页 130K
描述
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

阅读下载

中文翻译

获取价格

NE664M04-T2 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.83Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：0.5 A
基于收集器的最大容量：1.5 pF集电极-发射极最大电压：5 V
配置：SINGLE最高频带：C BAND
JESD-30 代码：R-PDSO-F4元件数量：1
端子数量：4封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：20000 MHz
Base Number Matches：1

NE664M04-T2 数据手册

 浏览型号NE664M04-T2的Datasheet PDF文件第2页浏览型号NE664M04-T2的Datasheet PDF文件第3页浏览型号NE664M04-T2的Datasheet PDF文件第4页浏览型号NE664M04-T2的Datasheet PDF文件第5页浏览型号NE664M04-T2的Datasheet PDF文件第6页浏览型号NE664M04-T2的Datasheet PDF文件第7页 
NEC's  
MEDIUM POWER NPN NE664M04  
SILICON HIGH FREQUENCY TRANSISTOR  
FEATURES  
•
•
•
•
HIGH GAIN BANDWIDTH:  
fT = 20 GHz  
HIGH OUTPUT POWER:  
P-1dB = 26 dBm at 1.8 GHz  
HIGH LINEAR GAIN:  
GL = 12 dB at 1.8 GHz  
2.05±0.1  
1.25±0.1  
LOW PROFILE M04 PACKAGE:  
SOT-343 footprint, with a height of only 0.59 mm  
Flat lead style for better RF performance  
DESCRIPTION  
NEC's NE664M04 is fabricated using NEC's state-of-the-art  
UHS0 25 GHz fT wafer process. With a transition frequency of  
20GHz, theNE664M04isusableinapplicationsfrom100MHz  
toover3GHz. TheNE664M04providesP1dBof26dBm, even  
with low voltage and low current, making this device an  
excellentchoicefortheoutputordriverstageformobileorfixed  
wireless applications.  
+0.01  
-0.05  
(leads 1, 3 and ,4)  
+0.30  
PIN CONNECTIONS  
The NE664M04 is housed in NEC's low profile/flat lead style  
"M04" package  
1. Emitter  
3. Emitter  
4. Base  
2. Collector  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
EIAJ3 REGISTRATION NUMBER  
NE664M04  
M04  
2SC5754  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Collector Cutoff Current at VCB = 5V, IE = 0  
UNITS  
MIN  
TYP  
MAX  
ICBO  
IEBO  
hFE  
nA  
nA  
1000  
1000  
100  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
DC Current1 Gain at VCE = 3 V, IC = 100 mA  
40  
60  
P1dB  
Output Power at 1 dB compression point at VCE = 3.6 V, ICQ = 4 mA,  
f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle  
dBm  
dB  
26.0  
GL  
Linear Gain at VCE = 3.6 V, ICQ = 20 mA, f = 1.8 GHz, Pin = 0 dBm,  
1/2 Duty Cycle  
12.0  
MAG  
|S21E|2  
ηc  
Maximum Available Power Gain4 at VCE = 3 V, IC = 100 mA, f = 2 GHz  
dBm  
dB  
12.0  
6.5  
60  
Insertion Power Gain at VCE = 3 V, IC = 100 mA, f = 2 GHz  
5.0  
16  
Collector Efficiency, 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm,  
1/2 Duty Cycle  
%
fT  
Gain Bandwidth at VCE = 3 V, IC = 100 mA, f = 0.5 GHz  
Feedback Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz  
GHz  
pF  
20  
Cre  
1.0  
1.5  
Notes:  
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the  
guard pin of capacitance meter.  
3. Electronic Industrail Association of Japan  
K 2 - 1 ).  
|S21  
|S12  
|
|
(K -  
4.  
MAG =  
California Eastern Laboratories  
1234567...9

中文翻译

下载PDF

与NE664M04-T2相关器件

型号 品牌 获取价格 描述 数据表
NE664M04-T2-A CEL

获取价格

 		MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR
NE66719 CEL

获取价格

 		NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE66719 NEC

获取价格

 		RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN,
NE66719-T1 CEL

获取价格

 		NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE66719-T1 NEC

获取价格

 		RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN,
NE67300 NEC

获取价格

 		LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
NE67383 NEC

获取价格

 		LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
NE67383-4 ETC

获取价格

 		TRANSISTOR | JFET | N-CHANNEL | 5V V(BR)DSS | MICRO-X
NE67400 CEL

获取价格

 		NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
NE67483B CEL

获取价格

 		NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

与NE664M04-T2相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证