Datasheet > NE66719

NE66719

更新时间： 2024-11-13 21:53:51

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管放大器
页数	文件大小	规格书
8页	107K
描述
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE66719 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE66719

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

HIGH GAIN BANDWIDTH: fT = 21 GHz

LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz

PACKAGE OUTLINE 19

1.6±0.1

0.8±0.1

DESCRIPTION

NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT

wafer process. This device is ideal for oscillator or low noise

amplifier applications at 2 GHz and above.

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE66719

2SC55667

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

100

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

Forward Current Gain²at VCE = 2 V, IC = 5 mA

Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz

GHz

MAG

MSG

|S21e|²

Maximum Available Power Gain⁴at VCE = 2 V, IC = 20 mA, f = 2 GHz

Maximum Stable Gain⁵at VCE = 2 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain at VCE = 1 V, IC = 10 mA, f = 2 GHz

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT

Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance³at VCB = 2 V, IC = 0, f = 1 MHz

12.5

13.5

11.0

11.5

1.1

9.0

9.5

1.5

IP3

Cre

0.24

0.30

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

S21

S12

(^{K- (K}²^-1))

4. MAG =

S21

5. MSG =

S12

California Eastern Laboratories

12 3 4 5 6 7 8

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