NE68000

更新时间： 2024-11-14 21:53:35

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
19页	247K
描述
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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技术参数
数据手册

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NE68000 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.035 A
集电极-发射极最大电压：	10 V	配置：	SINGLE
最高频带：	C BAND	JESD-30 代码：	R-XUUC-N2
元件数量：	1	端子数量：	2
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	UNCASED CHIP	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	UPPER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	10000 MHz
Base Number Matches：	1

NE68000 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE680

SERIES

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz

• LOW NOISE FIGURE:

1.7 dB at 2 GHz

2.6 dB at 4 GHz

• HIGH ASSOCIATED GAIN:

12.5 dB at 2 GHz

8.0 dB at 4 GHz

• EXCELLENT LOW VOLTAGE

LOW CURRENT PERFORMANCE

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE680 series of NPN epitaxial silicon transistors is

designed for low noise, high gain and low cost applications.

Boththechipandmicro-xversionsaresuitableforapplications

upto6GHz. TheNE680dieisalsoavailableinsixdifferentlow

cost plastic surface mount package styles. The NE680's high

fT makes it ideal for low voltage/low current applications, down

to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is

35 mA. For higher current applications see the NE681 series.

19 (3 PIN ULTRA

SUPER MINI MOLD)

18 (SOT 343 STYLE)

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

NE68018

NOISE FIGURE & ASSOCIATED GAIN

vs. FREQUENCY

6V, 5 mA

3V, 5 mA

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

2.5

2.0

1.5

1.0

300 500

1000

2000

3000

Frequency, f (GHz)

California Eastern Laboratories

12 3 4 5 6 7...19

中文翻译

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与NE68000相关器件

型号	品牌	获取价格	描述	数据表
NE68018	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC,
NE68018-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68018-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343
NE68018-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN
NE68019	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), S Band, Silicon, NPN, PLASTIC, SC-90
NE68019-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68019-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-416
NE68019-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN
NE68030	NEC	获取价格	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, 30, 3 PIN
NE68030-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR