Datasheet > 晶体管 > 射频小信号双极晶体管> NE68039-T1

NE68039-T1

更新时间： 2024-11-14 22:30:23

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
19页	247K
描述
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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技术参数
数据手册

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NE68039-T1 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	其他特性：	LOW NOISE
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.035 A
基于收集器的最大容量：	0.8 pF	集电极-发射极最大电压：	10 V
配置：	SINGLE	最高频带：	C BAND
JESD-30 代码：	R-PDSO-G4	元件数量：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	10000 MHz	Base Number Matches：	1

NE68039-T1 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE680

SERIES

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz

• LOW NOISE FIGURE:

1.7 dB at 2 GHz

2.6 dB at 4 GHz

• HIGH ASSOCIATED GAIN:

12.5 dB at 2 GHz

8.0 dB at 4 GHz

• EXCELLENT LOW VOLTAGE

LOW CURRENT PERFORMANCE

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE680 series of NPN epitaxial silicon transistors is

designed for low noise, high gain and low cost applications.

Boththechipandmicro-xversionsaresuitableforapplications

upto6GHz. TheNE680dieisalsoavailableinsixdifferentlow

cost plastic surface mount package styles. The NE680's high

fT makes it ideal for low voltage/low current applications, down

to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is

35 mA. For higher current applications see the NE681 series.

19 (3 PIN ULTRA

SUPER MINI MOLD)

18 (SOT 343 STYLE)

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

NE68018

NOISE FIGURE & ASSOCIATED GAIN

vs. FREQUENCY

6V, 5 mA

3V, 5 mA

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

2.5

2.0

1.5

1.0

300 500

1000

2000

3000

Frequency, f (GHz)

California Eastern Laboratories

12 3 4 5 6 7...19

中文翻译

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与NE68039-T1相关器件

型号	品牌	获取价格	描述	数据表
NE68039-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-143
NE68039-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN
NE680M03	NEC	获取价格	NPN SILICON TRANSISTOR
NE681	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE681	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68100	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68100	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68100-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN, LEAD FRE
NE68118	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
NE68118-T1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR