Datasheet > NE681

NE681

更新时间： 2024-01-11 13:44:11

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
21页	627K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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技术参数
数据手册

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NE681 技术参数

生命周期：	Obsolete	包装说明：	DIE
Reach Compliance Code：	unknown	风险等级：	5.83
Is Samacsys：	N	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.065 A	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	DIE	元件数量：	2
封装形式：	DIE	极性/信道类型：	NPN
认证状态：	Not Qualified	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	7000 MHz	Base Number Matches：	1

NE681 数据手册

SILICON TRANSISTOR

NE681 SERIES

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz

• LOW NOISE FIGURE:

1.2 dB at 1 GHz

1.6 dB at 2 GHz

• HIGH ASSOCIATED GAIN:

15 dB at 1 GHz

12 dB at 2 GHz

35 (MICRO-X)

00 (CHIP)

• LOW COST

DESCRIPTION

NEC's NE681 series of NPN epitaxial silicon transistors are

designed for low noise, high gain, low cost amplifier applica-

tions. Both the chip and micro-x versions are suitable for

amplifier applications up to 4 GHz. The NE681 die is also

available in six different low cost plastic surface mount pack-

age styles. NE681's unique device characteristics allow you to

useasinglematchingpointtosimultaneouslyachievebothlow

noise and high gain.

19 (3 PIN ULTRA

SUPER MINI MOLD)

18 (SOT 343 STYLE)

30 (SOT 323 STYLE)

39 (SOT 143 STYLE)

33 (SOT 23 STYLE)

NOISE FIGURE, GAIN MSG

AND MAG vs. FREQUENCY

CE = 3 V, IC = 5 mA

MSG

MAG

3.0

39R (SOT 143R STYLE)

2.0

1.0

0.5

1.0

2.0

3.0

Frequency, f (GHz)

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 28, 2005

12 3 4 5 6 7...21

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