Datasheet > 晶体管 > 射频小信号双极晶体管> NE68119-T1-A

NE68119-T1-A

更新时间： 2024-11-15 03:46:43

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管 ISM频段放大器
页数	文件大小	规格书
21页	627K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

获取价格

数据手册
替代型号

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NE68119-T1-A 数据手册

SILICON TRANSISTOR

NE681 SERIES

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz

• LOW NOISE FIGURE:

1.2 dB at 1 GHz

1.6 dB at 2 GHz

• HIGH ASSOCIATED GAIN:

15 dB at 1 GHz

12 dB at 2 GHz

35 (MICRO-X)

00 (CHIP)

• LOW COST

DESCRIPTION

NEC's NE681 series of NPN epitaxial silicon transistors are

designed for low noise, high gain, low cost amplifier applica-

tions. Both the chip and micro-x versions are suitable for

amplifier applications up to 4 GHz. The NE681 die is also

available in six different low cost plastic surface mount pack-

age styles. NE681's unique device characteristics allow you to

useasinglematchingpointtosimultaneouslyachievebothlow

noise and high gain.

19 (3 PIN ULTRA

SUPER MINI MOLD)

18 (SOT 343 STYLE)

30 (SOT 323 STYLE)

39 (SOT 143 STYLE)

33 (SOT 23 STYLE)

NOISE FIGURE, GAIN MSG

AND MAG vs. FREQUENCY

CE = 3 V, IC = 5 mA

MSG

MAG

3.0

39R (SOT 143R STYLE)

2.0

1.0

0.5

1.0

2.0

3.0

Frequency, f (GHz)

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 28, 2005

12 3 4 5 6 7...21

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NE68119-T1-A 替代型号

型号	品牌	替代类型	描述	数据表
NE68119-T1	CEL	类似代替	NPN SILICON HIGH FREQUENCY TRANSISTOR

与NE68119-T1-A相关器件

型号	品牌	获取价格	描述	数据表
NE68119-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN
NE68130	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
NE68130-T1	RENESAS	获取价格	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
NE68130-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68130-T1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68130-T1-A	RENESAS	获取价格	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC PACKAGE-3
NE68130-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN, LEAD FRE
NE68130-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68130-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN
NE68132	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 65MA I(C) \| TO-236