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NE68135 PDF预览

NE68135

更新时间: 2024-11-15 03:46:43
品牌 Logo 应用领域
CEL /
页数 文件大小 规格书
21页 627K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

NE68135 数据手册

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SILICON TRANSISTOR  
NE681 SERIES  
NEC's NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
FEATURES  
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz  
E
• LOW NOISE FIGURE:  
1.2 dB at 1 GHz  
B
1.6 dB at 2 GHz  
• HIGH ASSOCIATED GAIN:  
15 dB at 1 GHz  
12 dB at 2 GHz  
35 (MICRO-X)  
00 (CHIP)  
• LOW COST  
DESCRIPTION  
NEC's NE681 series of NPN epitaxial silicon transistors are  
designed for low noise, high gain, low cost amplifier applica-  
tions. Both the chip and micro-x versions are suitable for  
amplifier applications up to 4 GHz. The NE681 die is also  
available in six different low cost plastic surface mount pack-  
age styles. NE681's unique device characteristics allow you to  
useasinglematchingpointtosimultaneouslyachievebothlow  
noise and high gain.  
19 (3 PIN ULTRA  
SUPER MINI MOLD)  
18 (SOT 343 STYLE)  
30 (SOT 323 STYLE)  
39 (SOT 143 STYLE)  
33 (SOT 23 STYLE)  
NOISE FIGURE, GAIN MSG  
AND MAG vs. FREQUENCY  
V
CE = 3 V, IC = 5 mA  
MSG  
20  
10  
0
MAG  
3.0  
39R (SOT 143R STYLE)  
2.0  
1.0  
G
A
NF  
0.5  
1.0  
2.0  
3.0  
Frequency, f (GHz)  
The information in this document is subject to change without notice. Before using this document, please confirm  
that this is the latest version.  
Date Published: June 28, 2005  

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