Datasheet > NE681M03-A

NE681M03-A

更新时间： 2024-09-24 22:23:47

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
4页	142K
描述
NECs NPN SILICON TRANSISTOR

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NE681M03-A 数据手册

NE681M03

NEC's NPN SILICON TRANSISTOR

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M03

•

NEW M03 PACKAGE:

1.2±0.05

• Smallest transistor outline package available

• Low profile/0.59 mm package height

• Flat lead style for better RF performance

0.8±0.1

•

HIGH GAIN BANDWIDTH PRODUCT:

fT = 7 GHz

1.4 ±0.1

(0.9)

0.45

LOW NOISE FIGURE:

NF = 1.4 dB

0.3±0.1

0.2±0.1

DESCRIPTION

NEC's NE681M03 transistor is ideal for low noise, high gain,

and low cost amplifier applications. NEC's new low profile/

flat lead style "M03" package is ideal for today's portable

wireless applications. The NE681 is also available in chip,

Micro-x, and six different low cost plastic surface mount

package styles.

0.59±0.05

+0.1

-0.05

0.15

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE681M03

2SC5433

M03

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz

Forward Current Gain at VCE = 3 V, IC = 7 mA

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

GHz

4.5

7.0

1.4

2.7

|S21E|²

hFE

145

0.8

0.9

ICBO

IEBO

µA

CRE

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

12 3 4

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