Datasheet > 晶体管 > 射频小信号双极晶体管> NE681M13-A

NE681M13-A

更新时间： 2024-11-14 22:23:51

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
3页	149K
描述
NECs NP SILICON TRANSISTOR

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数据手册

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NE681M13-A 数据手册

NEC's NPN SILICON TRANSISTOR

NE681M13

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M13

•

NEW MINIATURE M13 PACKAGE:

– Small transistor outline –

1.0 X 0.5 X 0.5 mm

+0.1

–0.05

+0.1

0.5

0.3

0.15

–0.05

– Low profile / 0.50 mm package height

– Flat lead style for better RF performance

0.35

•

HIGH GAIN BANDWIDTH PRODUCT:

fT = 7 GHz

+0.1

–0.05

+0.1

–0.05

1.0

0.7

0.2

0.35

LOW NOISE FIGURE:

NF = 1.4 dB

+0.1

0.15

–0.05

0.1

0.2

DESCRIPTION

Bottom View

+0.1

–0.05

0.5±0.05

0.125

NEC's NE681M13 transistor is ideal for low noise, high gain,

and low cost amplifier applications. NEC's new low profile/

flat lead style "M13" package is ideal for today's portable

wireless applications. The NE681 is also available in chip,

Micro-x, and six different low cost plastic surface mount

package styles.

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE681M13

2SC5615

M13

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz

Forward Current Gain at VCE = 3 V, IC = 7 mA

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

GHz

4.5

1.4

2.7

|S21E|²

hFE

145

0.8

0.9

ICBO

IEBO

µA

CRE

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

12 3

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