Datasheet > NE685

NE685

更新时间： 2024-11-15 03:46:43

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
18页	355K
描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE685 数据手册

NE685

NEC'S SURFACE MOUNT NPN

SERIES

SILICON HIGH FREQUENCY TRANSISTOR

FEATURES

• LOW COST

• SMALL AND ULTRA SMALL SIZE PACKAGES

• LOW VOLTAGE/LOW CURRENT OPERATION

• HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz

• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ

19 (3 PIN ULTRA SUPER

MINI MOLD)

18 (SOT 343 STYLE)

DESCRIPTION

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

NEC's family of high frequency, low cost, surface mount

devices are well suited for portable wireless communications

and cellular radio applications.

The NE685 series of high fT (12 GHz) devices is suitable for

very low voltage/low current, low noise applications. These

products are ideal for applications up to 2.4 GHz where low

cost, high gain, low voltage, and low current are prime con-

cerns.

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER¹

EIAJ²REGISTERED NUMBER

PACKAGE OUTLINE

NE68518

2SC5015

NE68519

2SC5010

NE68530

2SC4959

NE68533

2SC4955

NE68539/39R

2SC4957

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

Gain Bandwidth Product at

VCE = 3V, IC = 10 mA, f = 2.0 GHz

GHz

NFMIN

GNF

Minimum Noise Figure at

VCE = 3 V, IC = 3 mA, f = 2.0 GHz

1.5 2.5

8.5

1.5 2.5

7.5

Associated Gain at

VCE = 3V, IC = 3 mA, f = 2.0 GHz

7.5

10.5

MAG

Maximum Available Gain at

VCE = 3 V, IC = 10 mA, f = 2.0 GHz

8.5

|S21E|

Insertion Power Gain at

VCE = 3V, IC =10 mA, f = 2.0 GHz

hFE

ICBO

IEBO

Forward Current Gain³at

VCE = 3 V, IC = 10 mA

75 110 150 75 110 150 75 110 150 75 110 150 75 110 150

Collector Cutoff Current

at VCB = 5 V, IE = 0 mA

μA

0.1

Emitter Cutoff Current

at VEB = 1 V, IC = 0 mA

CRE

Feedback Capacitance at

VCB = 3 V, IE = 0 mA, f = 1 MHz

0.3 0.5

150

0.4 0.7

125

0.4 0.7

150

0.4 0.7

180

0.3 0.5

180

Total Power Dissipation

RTH(J-A)

Thermal Resistance

(Junction to Ambient)

°C/W

833

200

1000

200

833

200

620

200

620

200

RTH(J-C)

Thermal Resistance(Junction to Case) °C/W

Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.

2. Electronic Industrial Association of Japan.

3. Pulsed measurement, PW≤350 μs, duty cycle ≤2%.

4. The emitter terminal should be connected to the ground terminal

of the 3 terminal capacitance bridge.

California Eastern Laboratories

12 3 4 5 6 7...18

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与NE685相关器件

型号	品牌	获取价格	描述	数据表
NE68518	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 30MA I(C) \| SOT-343R
NE68518-T1	NEC	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68518-T1-A	CEL	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68519	NEC	获取价格	NONLINEAR MODEL
NE68519-T1	NEC	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68519-T1-A	CEL	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68519-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
NE68530	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC,
NE68530-T1	NEC	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68530-T1-A	CEL	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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