Datasheet > NE685M03

NE685M03

更新时间： 2024-09-25 03:46:43

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管
页数	文件大小	规格书
4页	206K
描述
NPN SILICON TRANSISTOR

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NE685M03 数据手册

NPN SILICON TRANSISTOR NE685M03

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M03

•

NEW M03 PACKAGE:

1.2±0.05

• Smallest transistor outline package available

• Low profile/0.59 mm package height

• Flat lead style for better RF performance

0.8±0.1

•

HIGH GAIN BANDWIDTH PRODUCT:

fT = 12 GHz

1.4 ±0.1

(0.9)

0.45

LOW NOISE FIGURE:

NF = 1.5 dB at 2 GHz

0.3±0.1

DESCRIPTION

0.2±0.1

The NEC's NE685M03 transistor is designed for low noise,

high gain, and low cost requirements. This high fT part is well

suited for very low voltage/low current designs for portable

wirelesscommunicationsandcellularradioapplications.NEC's

newlowprofile/flatleadstyle"M03"packageisidealfortoday's

portable wireless applications. The NE685 is also available in

six different low cost plastic surface mount package styles.

0.59±0.05

+0.1

-0.05

0.15

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE685M03

2SC5435

M03

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz

Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz

Forward Current Gain at VCE = 3 V, IC = 10 mA

Collector Cutoff Current at VCB = 5 V, IE = 0

GHz

1.5

2.5

|S21E|²

hFE

140

0.1

0.7

ICBO

IEBO

µA

Emitter Cutoff Current at VEB = 1 V, IC = 0

CRE

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

0.4

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

12 3 4

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