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NE685M23 PDF预览

NE685M23

更新时间: 2024-11-12 22:45:23
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
2页 21K
描述
NPN SILICON TRANSISTOR

NE685M23 技术参数

生命周期:Obsolete包装说明:CHIP CARRIER, R-CBCC-N3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N其他特性:LOW NOISE
外壳连接:COLLECTOR最大集电极电流 (IC):0.03 A
基于收集器的最大容量:0.7 pF集电极-发射极最大电压:5 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):12000 MHzBase Number Matches:1

NE685M23 数据手册

 浏览型号NE685M23的Datasheet PDF文件第2页 
PRELIMINARY DATA SHEET  
NPN SILICON TRANSISTOR NE685M23  
OUTLINE DIMENSIONS (Units in mm)  
FEATURES  
PACKAGE OUTLINE M23  
NEW MINIATURE M23 PACKAGE:  
– World's smallest transistor package footprint —  
leads are completely underneath package body  
– Low profile/0.55 mm package height  
0.5  
1
– Ceramic substrate for better RF performance  
0.25  
0.4  
HIGH GAIN BANDWIDTH PRODUCT:  
fT = 12 GHz  
LOW NOISE FIGURE:  
NF = 1.5 dB at 2 GHz  
2
0.25  
3
DESCRIPTION  
0.2  
The NE685M23 transistor is designed for low noise, high gain,  
and low cost requirements. This high fT part is well suited for  
very low voltage/low current designs for portable wireless  
communications and cellular radio applications. NEC's new  
low profile/ceramic substrate style "M23" package is ideal for  
today's portable wireless applications. The NE685 is also  
available in six different low cost plastic surface mount pack-  
age styles.  
0.15  
0.15  
0.6  
BOTTOM VIEW  
PIN CONNECTIONS  
1. Collector  
2. Emitter  
3. Base  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
EIAJ1 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE685M23  
2SC5652  
M23  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
fT  
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Noise Figure at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 2 GHz  
Forward Current Gain at VCE = 3 V, IC = 10 mA  
Collector Cutoff Current at VCB = 5 V, IE = 0  
GHz  
dB  
12  
1.5  
10  
NF  
|S21E|2  
2.5  
dB  
7
2
hFE  
75  
145  
0.1  
0.1  
0.7  
ICBO  
IEBO  
µA  
µA  
pF  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
3
CRE  
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz  
0.4  
Notes:  
1. Electronic Industrial Association of Japan.  
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.  
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.  
California Eastern Laboratories  

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