Datasheet > NE685M33-A

NE685M33-A

更新时间： 2024-09-24 22:30:43

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
6页	361K
描述
NECs NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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NE685M33-A 数据手册

DATA SHEET

NEC's NPN SILICON TRANSISTOR

NE685M33

FEATURES

•

LOW NOISE:

NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz

INSERTION POWER GAIN:

|S21e|²= 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE

ORDERING INFORMATION

PART NUMBER

NE685M33-A

NE685M33-T3-A

QUANTITY

SUPPLYING FORM

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

50 pcs (Non reel)

10 kpcs/reel

Remark To order evaluation samples, contact your nearby sales ofﬁce.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATINGS

UNIT

9.0

6.0

2.0

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

130

150

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

California Eastern Laboratories

12 3 4 5 6

中文翻译

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