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NE687 PDF预览

NE687

更新时间: 2024-11-13 03:46:43
品牌 Logo 应用领域
CEL 晶体晶体管
页数 文件大小 规格书
22页 315K
描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

NE687 数据手册

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SURFACE MOUNT NPN SILICON  
HIGH FREQUENCY TRANSISTOR  
NE687  
SERIES  
FEATURES  
• LOW NOISE: 1.3 dB AT 2.0 GHz  
• LOW VOLTAGE OPERATION  
• EASY TO MATCH  
19 (3 PIN ULTRA SUPER  
MINI MOLD)  
18 (SOT 343 STYLE)  
• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz  
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE  
MOUNT PACKAGE STYLES  
DESCRIPTION  
30 (SOT 323 STYLE)  
33 (SOT 23 STYLE)  
NEC's NE687 series of NPN epitaxial silicon transistors are  
designed for low cost, low noise applications. Excellent perfor-  
mance at low voltage/low current makes this series an ideal  
choice for portable wireless applications at 1.6, 1.9 and 2.4  
GHz. TheNE687dieisavailableinsixdifferentlowcostplastic  
surface mount package styles.  
39R (SOT 143R STYLE)  
39 (SOT 143 STYLE)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER1  
EIAJ2 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE68718  
2SC5185  
18  
NE68719  
2SC5186  
19  
NE68730  
2SC5184  
30  
NE68733  
2SC5182  
33  
NE68739/39R  
2SC5183/83R  
39/39R  
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX  
fT  
Gain Bandwidth Product at  
VCE = 2 V, IC = 20 mA, f = 2.0 GHz  
GHz 10 13  
9
7
11  
9
7
11  
9
7
12  
7.5 10  
fT  
Gain Bandwidth Product at  
VCE = 1 V, IC = 10 mA, f = 2.0 GHz  
GHz  
dB  
8
11  
9
9
10  
7
8.5  
NFMIN  
NFMIN  
Minimum Noise Figure at  
VCE = 2 V, IC = 3 mA, f = 2.0 GHz  
1.3 2.0  
1.3 2.0  
1.3 2.0  
1.3 2.0  
1.3 2.0  
8.5  
1.3 2.0  
1.3 2.0  
8.5  
1.3 2.0  
1.3 2.0  
Minimum Noise Figure at  
VCE = 1 V, IC = 3 mA, f = 2.0 GHz  
dB  
1.3 2.0  
2
|S21e|  
Insertion Power Gain at  
VCE = 2V, IC =20 mA, f = 2.0 GHz  
dB  
8
11  
9
8.5 10  
7.5  
7
6
7
6
7.5 10  
8.5  
2
|S21e|  
Insertion Power Gain at  
VCE = 1V, IC =10 mA, f = 2.0 GHz  
Forward Current Gain3 at  
VCE = 2 V, IC = 20 mA  
dB  
7.5  
70  
6
7.5  
7.5  
7
hFE  
ICBO  
IEBO  
140 70  
100  
140 70  
100  
140 70  
100  
140 70  
100  
140  
100  
100  
CollectorCutoffCurrent  
at VCB = 5 V, IE = 0 mA  
nA  
nA  
EmitterCutoffCurrent  
at VEB = 1 V, IC = 0 mA  
100  
100  
100  
100  
4
CRE  
FeedbackCapacitanceat  
VCB = 2 V, IE = 0 mA, f = 1 MHz  
pF  
0.3 0.6  
0.4 0.8  
90  
0.4 0.8  
0.4 0.8  
0.4 0.8  
90  
PT  
TotalPowerDissipation  
mW  
90  
90  
90  
RTH(J-A)  
ThermalResistance  
(Junction to Ambient)  
°C/W  
°C/W  
833  
1250  
833  
625  
625  
RTH(J-C)  
ThermalResistance  
(Junction to Case)  
Notes:  
3. Pulsed measurement, PW 350 µs, duty cycle 2%.  
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.  
2. Electronic Industrial Association of Japan.  
4. The emitter terminal should be connected to the ground terminal  
of the 3 terminal capacitance bridge.  
California Eastern Laboratories  

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