Datasheet > NE687M03

NE687M03

更新时间： 2024-11-12 22:24:07

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管
页数	文件大小	规格书
4页	310K
描述
NECs NPN SILICON TRANSISTOR

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NE687M03 数据手册

NEC's

NE687M03

NPN SILICON TRANSISTOR

FEATURES

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE M03

•

NEW M03 PACKAGE:

1.2±0.05

• Smallest transistor outline package available

• Low proﬁle/0.59 mm package height

• Flat lead style for better RF performance

0.8±0.1

•

HIGH GAIN BANDWIDTH PRODUCT:

fT = 14 GHz

1.4 ±0.1

(0.9)

0.45

LOW NOISE FIGURE:

NF = 1.4 dB at 2 GHz

+0.1

-0

0.3

+0.1

0.2

-0

DESCRIPTION

NEC's NE687M03 transistor is designed for low noise, high

gain, and low cost requirements. This high fT part is well suited

for very low voltage/low current designs for portable wireless

communications and cellular radio applications. NEC's new

low proﬁle/ﬂat lead style "M03" package is ideal for today's

portable wireless applications. The NE687 is also available in

six different low cost plastic surface mount package styles.

0.59±0.05

+0.1

0.15

-0.05

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE687M03

2SC5436

M03

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

GHz

Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz

VCE = 1 V, IC = 3 mA, f = 2 GHz

1.3

|S21E|²

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

8.5

9.0

hFE²

ICBO

IEBO

CRE³

Forward Current Gain at VCE = 2 V, IC = 20 mA

Collector Cutoff Current at VCB = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

130

0.1

0.8

μA

Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz

0.4

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

12 3 4

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