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NE68819-T1-A

更新时间： 2024-11-19 03:46:43
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页数 文件大小 规格书
20页 348K
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SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE68819-T1-A 数据手册

 浏览型号NE68819-T1-A的Datasheet PDF文件第2页浏览型号NE68819-T1-A的Datasheet PDF文件第3页浏览型号NE68819-T1-A的Datasheet PDF文件第4页浏览型号NE68819-T1-A的Datasheet PDF文件第5页浏览型号NE68819-T1-A的Datasheet PDF文件第6页浏览型号NE68819-T1-A的Datasheet PDF文件第7页 
SURFACE MOUNT NPN SILICON  
HIGH FREQUENCY TRANSISTOR  
NE688  
SERIES  
FEATURES  
• LOW PHASE NOISE DISTORTION  
• LOW NOISE: 1.5 dB at 2.0 GHz  
• LOW VOLTAGE OPERATION  
• LARGE ABSOLUTE MAXIMUM COLLECTOR  
CURRENT: IC MAX = 100 mA  
19 (3 PIN ULTRA SUPER  
MINI MOLD)  
18 (SOT 343 STYLE)  
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE  
MOUNT PACKAGE STYLES  
• ALSO AVAILABLE IN CHIP FORM  
DESCRIPTION  
NEC's NE688 series of NPN epitaxial silicon transistors are  
designedforlowcostamplifierandoscillatorapplications. Low  
noise figures, high gain and high current capability equate to  
wide dynamic range and excellent linearity. NE688's low  
phase noise distortion and high fT make it an excellent choice  
for oscillator applications up to 5 GHz. The NE688 series is  
available in six different low cost plastic surface mount pack-  
age styles, and in chip form.  
30 (SOT 323 STYLE)  
33 (SOT 23 STYLE)  
9R (SOT 143R STYLE)  
(SOT 143 STYLE)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER1  
EIAJ2 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE68818  
2SC5194  
18  
NE68819  
2SC5195  
19  
NE68830  
2SC5193  
30  
NE68833  
2SC5191  
33  
NE68839/39R  
2SC5192/92R  
39  
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX  
fT  
Gain Bandwidth Product at  
VCE = 1V, IC = 3 mA, f = 2.0 GHz  
GHz  
GHz  
dB  
4
5
4.5  
5
4
4.5  
4
4.5  
4
4.5  
fT  
Gain Bandwidth Product at  
VCE = 3V, IC = 20 mA, f = 2.0 GHz  
10  
9.5  
9
8.5  
9
NFMIN  
NFMIN  
Minimum Noise Figure at  
VCE = 1 V, IC = 3 mA, f = 2.0 GHz  
1.7 2.5  
1.5  
1.7 2.5  
1.5  
1.7 2.5  
1.5  
1.7 2.5  
1.5  
1.7 2.5  
1.5  
Minimum Noise Figure at  
VCE = 3 V, IC = 7 mA, f = 2.0 GHz  
dB  
2
|S21E|  
|S21E|  
hFE  
Insertion Power Gain at  
VCE = 1V, IC = 3 mA, f = 2.0 GHz  
dB  
3.0 4.0  
8.5  
3.0 4.0  
8
2.5 3.5  
6.5  
2.5 3.5  
6.5  
4.0 4.5  
9
2
Insertion Power Gain at  
VCE = 3V, IC = 20 mA, f = 2.0 GHz  
Forward Current Gain3 at  
VCE = 1 V, IC = 3 mA  
dB  
80  
160 80  
160 80  
160 80  
160 80  
160  
100  
100  
ICBO  
IEBO  
Collector Cutoff Current  
at VCB = 5 V, IE = 0 mA  
nA  
nA  
100  
100  
100  
100  
100  
100  
100  
100  
Emitter Cutoff Current  
at VEB = 1 V, IC = 0 mA  
4
CRE  
Feedback Capacitance at  
VCB = 1 V, IE = 0 mA, f = 1 MHz  
pF  
0.65 0.8  
150  
0.7 0.8  
125  
0.75 0.85  
150  
0.75 0.85  
200  
0.65 0.8  
200  
PT  
Total Power Dissipation  
mW  
RTH(J-A)  
Thermal Resistance  
(Junction to Ambient)  
°C/W  
833  
1000  
833  
625  
625  
RTH(J-C)  
Thermal Resistance(Junction to Case) °C/W  
Notes:  
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.  
1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal of  
2. Electronic Industrial Association of Japan. the 3 terminal capacitance bridge.  
California Eastern Laboratories  
1234567...20

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NE68819-T1-A 替代型号

型号 品牌 替代类型 描述 数据表
2SC5195 NEC

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