Datasheet > NE68939-T1-A

NE68939-T1-A

更新时间： 2024-11-19 03:13:19

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	150K
描述
NPN SILICON EPITAXIAL TRANSISTOR

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中文翻译

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数据手册

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NE68939-T1-A 数据手册

NEC'S NPN SILICON EPITAXIAL

TRANSISTOR

NE68939

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• OUTPUT POWER AT 1dB COMPRESSION POINT:

24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,

Duty 1/8

PACKAGE OUTLINE 39

+0.2

-0.3

2.8

• 4 PIN MINI MOLD PACKAGE: NE68939

+0.10

-0.05

+0.2

-0.1

0.4

1.5

(LEADS 2, 3, 4)

2.9 ± 0.2

0.95

0.85

1.9

1) Collector

2) Emitter

3) Base

DESCRIPTION

+0.10

-0.05

0.6

NEC's NE68939 is a low voltage, NPN Silicon Bipolar Tran-

sistor for pulsed power applications. The device is designed

to operate from a 3.6 V supply, and deliver over 1/4 watt of

power output at frequencies up to 2.0 GHZ with a 1:8 duty

cycle. These characteristics make it an ideal device for TX

driver stage in a 1.9 GHZ digital cordless telephone (DECT or

PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-

mold package and is available on tape and reel.

4) Emitter

+0.2

1.1

0.8

+0.10

-0.1

0.16

-0.06

5˚

0 to 0.1

The NE68939 transistors are manufactured to NEC's strin-

gent quality assurance standards to ensure highest reliability

and consistent superior performance.

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PART NUMBER

PACKAGE CODE

NE68939

SYMBOLS

ICBO

PARAMETERS

UNITS

MIN

TYP

MAX

2.5

Collector Cutoff Current, VCB = 5 V, IE = 0

Emitter Cutoff Current, VEB = 1 V, IC = 0

DC Current Gain, VCE = 3.6 V, IC = 100 mA

µA

IEBO

2.5

hFE

P-1

Output Power

dBm

24.5

VCE = 3.6 V, f = 1.9 GHZ

ICq = 2 mA (Class AB)

Duty 1/8

Power Gain

6.5

η_C

Collector Efficiency

TON

Maximum Device On Time

10.0

California Eastern Laboratories

12 3

中文翻译

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