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NE68939-T1-A PDF预览

NE68939-T1-A

更新时间: 2024-11-01 03:13:19
品牌 Logo 应用领域
CEL 晶体晶体管光电二极管放大器
页数 文件大小 规格书
3页 150K
描述
NPN SILICON EPITAXIAL TRANSISTOR

NE68939-T1-A 数据手册

 浏览型号NE68939-T1-A的Datasheet PDF文件第2页浏览型号NE68939-T1-A的Datasheet PDF文件第3页 
NEC'S NPN SILICON EPITAXIAL  
TRANSISTOR  
NE68939  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
• OUTPUT POWER AT 1dB COMPRESSION POINT:  
24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,  
Duty 1/8  
PACKAGE OUTLINE 39  
+0.2  
-0.3  
2.8  
• 4 PIN MINI MOLD PACKAGE: NE68939  
+0.10  
-0.05  
+0.2  
-0.1  
0.4  
1.5  
(LEADS 2, 3, 4)  
2
1
3
4
2.9 ± 0.2  
0.95  
0.85  
1.9  
1) Collector  
2) Emitter  
3) Base  
DESCRIPTION  
+0.10  
-0.05  
0.6  
NEC's NE68939 is a low voltage, NPN Silicon Bipolar Tran-  
sistor for pulsed power applications. The device is designed  
to operate from a 3.6 V supply, and deliver over 1/4 watt of  
power output at frequencies up to 2.0 GHZ with a 1:8 duty  
cycle. These characteristics make it an ideal device for TX  
driver stage in a 1.9 GHZ digital cordless telephone (DECT or  
PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-  
mold package and is available on tape and reel.  
4) Emitter  
+0.2  
1.1  
0.8  
+0.10  
-0.1  
0.16  
-0.06  
5˚  
5˚  
0 to 0.1  
The NE68939 transistors are manufactured to NEC's strin-  
gent quality assurance standards to ensure highest reliability  
and consistent superior performance.  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
PART NUMBER  
PACKAGE CODE  
NE68939  
39  
SYMBOLS  
ICBO  
PARAMETERS  
UNITS  
MIN  
TYP  
MAX  
2.5  
Collector Cutoff Current, VCB = 5 V, IE = 0  
Emitter Cutoff Current, VEB = 1 V, IC = 0  
DC Current Gain, VCE = 3.6 V, IC = 100 mA  
µA  
µA  
IEBO  
2.5  
hFE  
30  
P-1  
Output Power  
dBm  
dB  
24.5  
8
VCE = 3.6 V, f = 1.9 GHZ  
ICq = 2 mA (Class AB)  
Duty 1/8  
Gp  
Power Gain  
6.5  
50  
ηC  
Collector Efficiency  
%
62  
TON  
Maximum Device On Time  
MS  
10.0  
California Eastern Laboratories  

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