5秒后页面跳转
NE68939-T1FB-A PDF预览

NE68939-T1FB-A

更新时间: 2024-11-19 13:11:59
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 30K
描述
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, SC-61, 4 PIN

NE68939-T1FB-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-61
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.72
外壳连接:COLLECTOR最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:6 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e6元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NE68939-T1FB-A 数据手册

 浏览型号NE68939-T1FB-A的Datasheet PDF文件第2页 
PRELIMINARY DATA SHEET  
NPN SILICON EPITAXIAL TRANSISTOR  
NE68939  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
• OUTPUT POWER AT 1dB COMPRESSION POINT:  
24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,  
Duty 1/8  
PACKAGE OUTLINE 39  
+0.2  
-0.3  
2.8  
• 4 PIN MINI MOLD PACKAGE: NE68939  
+0.10  
+0.2  
-0.1  
0.4  
-0.05  
(LEADS 2, 3, 4)  
1.5  
2
1
3
4
2.9 ± 0.2  
0.95  
0.85  
1.9  
1) Collector  
2) Emitter  
3) Base  
DESCRIPTION  
+0.10  
-0.05  
0.6  
The NE68939 is a low voltage, NPN Silicon Bipolar Transistor  
for pulsed power applications. The device is designed to op-  
erate from a 3.6 V supply, and deliver over 1/4 watt of power  
output at frequencies up to 2.0 GHZ with a 1:8 duty cycle.  
These characteristics make it an ideal device for TX driver  
stage in a 1.9 GHZ digital cordless telephone (DECT or PHS).  
The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold  
package and is available on tape and reel.  
4) Emitter  
+0.2  
1.1  
0.8  
+0.10  
-0.1  
0.16  
-0.06  
5˚  
5˚  
0 to 0.1  
The NE68939 transistors are manufactured to NEC's strin-  
gent quality assurance standards to ensure highest reliability  
and consistent superior performance.  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
PART NUMBER  
PACKAGE CODE  
NE68939  
39  
SYMBOLS  
ICBO  
PARAMETERS  
UNITS  
MIN  
TYP  
MAX  
2.5  
Collector Cutoff Current, VCB = 5 V, IE = 0  
Emitter Cutoff Current, VEB = 1 V, IC = 0  
DC Current Gain, VCE = 3.6 V, IC = 100 mA  
µA  
µA  
IEBO  
2.5  
hFE  
30  
P-1  
Output Power  
dBm  
dB  
24.5  
8
VCE = 3.6 V, f = 1.9 GHZ  
ICq = 2 mA (Class AB)  
Duty 1/8  
Gp  
Power Gain  
6.5  
50  
ηC  
Collector Efficiency  
%
62  
TON  
Maximum Device On Time  
MS  
10.0  
California Eastern Laboratories  

与NE68939-T1FB-A相关器件

型号 品牌 获取价格 描述 数据表
NE69039 NEC

获取价格

NPN SILICON EPITAXIAL TRANSISTOR
NE69039 CEL

获取价格

NPN SILICON EPITAXIAL TRANSISTOR
NE69039-T1 NEC

获取价格

NPN SILICON EPITAXIAL TRANSISTOR
NE69039-T1-A CEL

获取价格

NPN SILICON EPITAXIAL TRANSISTOR
NE69039-T1FB NEC

获取价格

RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, S
NE69039-T1FB-A NEC

获取价格

暂无描述
NE696M01 CEL

获取价格

NPN SILICON HIGH FREQUENCY TRANSISTOR
NE696M01-T1 RENESAS

获取价格

S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINI MOLD, ULTRA SMALL PACKAGE-6
NE696M01-T1-A CEL

获取价格

NPN SILICON HIGH FREQUENCY TRANSISTOR
NE698M01 NEC

获取价格

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION