5秒后页面跳转
NE69039-T1FB PDF预览

NE69039-T1FB

更新时间: 2024-11-01 13:11:59
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
2页 30K
描述
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-61, 4 PIN

NE69039-T1FB 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:PLASTIC, SC-61, 4 PINReach Compliance Code:compliant
风险等级:5.8Is Samacsys:N
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:6 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

NE69039-T1FB 数据手册

 浏览型号NE69039-T1FB的Datasheet PDF文件第2页 
PRELIMINARY DATA SHEET  
NPN SILICON EPITAXIAL TRANSISTOR  
NE69039  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
• OUTPUT POWER AT 1dB COMPRESSION POINT:  
27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,  
Duty 1/8  
PACKAGE OUTLINE 39  
+0.2  
-0.3  
• 4 PIN MINI MOLD PACKAGE: NE69039  
2.8  
+0.10  
-0.05  
(LEADS 2, 3, 4)  
+0.2  
-0.1  
0.4  
1.5  
2
1
3
4
2.9 ± 0.2 0.95  
1.9  
0.85  
1) Collector  
2) Emitter  
3) Base  
+0.10  
-0.05  
DESCRIPTION  
0.6  
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor  
for pulsed power applications. The device is designed to op-  
erate from a 3.6 V supply, and deliver over 1/2 watt of power  
output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These  
characteristics make it an ideal device for TX output stage in a  
1.9 GHZ digital cordless telephone (DECT or PHS). The part  
is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package  
and is available on tape and reel.  
4) Emitter  
+0.2  
-0.1  
1.1  
0.8  
+0.10  
-0.06  
0.16  
5˚  
5˚  
0 to 0.1  
The NE69039 transistors are manufactured to NEC's stringent  
quality assurance standards to ensure highest reliability and  
consistent superior performance.  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
PART NUMBER  
NE69039  
39  
PACKAGE CODE  
SYMBOLS  
ICBO  
PARAMETERS  
UNITS  
µA  
MIN  
TYP  
MAX  
2.5  
Collector Cutoff Current, VCB = 5 V, IE = 0  
Emitter Cutoff Current, VEB = 1 V, IC = 0  
DC Current Gain, VCE = 3.6 V, IC = 100 mA  
IEBO  
µA  
2.5  
hFE  
30  
P-1  
Output Power  
dBm  
dB  
27.5  
6.0  
VCE = 3.6 V, f = 1.9 GHZ  
ICq = 1 mA (Class AB)  
Duty 1/8  
GP  
Power Gain  
5.0  
50  
ηC  
Collector Efficiency  
%
72  
TON  
Maximum Device On Time  
MS  
10.0  
California Eastern Laboratories  

与NE69039-T1FB相关器件

型号 品牌 获取价格 描述 数据表
NE69039-T1FB-A NEC

获取价格

暂无描述
NE696M01 CEL

获取价格

NPN SILICON HIGH FREQUENCY TRANSISTOR
NE696M01-T1 RENESAS

获取价格

S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINI MOLD, ULTRA SMALL PACKAGE-6
NE696M01-T1-A CEL

获取价格

NPN SILICON HIGH FREQUENCY TRANSISTOR
NE698M01 NEC

获取价格

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
NE698M01-T1 NEC

获取价格

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
NE699M01 NEC

获取价格

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NE699M01-T1 NEC

获取价格

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NE6FAAH0-0-B ETC

获取价格

N e u t r i k ® P a r t N u m b e r G u i d
NE6FAH0-0-B ETC

获取价格

N e u t r i k ® P a r t N u m b e r G u i d