是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, SC-61, 4 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.8 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.3 A | 集电极-发射极最大电压: | 6 V |
配置: | SINGLE | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE69039-T1FB-A | NEC |
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暂无描述 | |
NE696M01 | CEL |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE696M01-T1 | RENESAS |
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S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINI MOLD, ULTRA SMALL PACKAGE-6 | |
NE696M01-T1-A | CEL |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE698M01 | NEC |
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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION | |
NE698M01-T1 | NEC |
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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION | |
NE699M01 | NEC |
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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION | |
NE699M01-T1 | NEC |
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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION | |
NE6FAAH0-0-B | ETC |
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N e u t r i k ® P a r t N u m b e r G u i d | |
NE6FAH0-0-B | ETC |
获取价格 |
N e u t r i k ® P a r t N u m b e r G u i d |