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NE696M01-T1 PDF预览

NE696M01-T1

更新时间: 2024-11-23 14:43:55
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 105K
描述
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINI MOLD, ULTRA SMALL PACKAGE-6

NE696M01-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.89最大集电极电流 (IC):0.03 A
配置:Single最小直流电流增益 (hFE):80
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

NE696M01-T1 数据手册

 浏览型号NE696M01-T1的Datasheet PDF文件第2页浏览型号NE696M01-T1的Datasheet PDF文件第3页浏览型号NE696M01-T1的Datasheet PDF文件第4页浏览型号NE696M01-T1的Datasheet PDF文件第5页浏览型号NE696M01-T1的Datasheet PDF文件第6页 
NEC's NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
NE696M01  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
PACKAGE OUTLINE M01  
HIGH fT:  
14 GHz TYP at 3 V, 10 mA  
TOP VIEW  
LOW NOISE FIGURE:  
NF = 1.6 dB TYP at 2 GHz  
2.1 ± 0.1  
1.25 ± 0.1  
HIGH GAIN:  
|S21E|2 = 14 dB TYP at 2 GHz  
6 PIN SMALL MINI MOLD PACKAGE  
1
2
6
5
0.65  
EXCELLENT LOW VOLTAGE, LOW CURRENT  
PERFORMANCE  
2.0 ± 0.2  
0.2 (All Leads)  
1.3  
3
4
SIDE VIEW  
DESCRIPTION  
0.9 ± 0.1  
NEC's NE696M01 is an NPN high frequency silicon epitaxial  
transistor (NE685) encapsulated in an ultra small 6 pin SOT-  
363 package. Its four emitter pins decrease emitter inductance  
resulting in 3 dB more gain compared to conventional SOT-23  
and SOT-143 devices. The NE696M01 is ideal for LNA and  
pre-driverapplicationsupto2.4GHzwherelowcost,highgain,  
low voltage and low current are prime considerations.  
0.7  
+0.10  
- 0.05  
0.15  
0 ~ 0.1  
PIN OUT  
1. Emitter  
2. Emitter  
3. Base  
4. Emitter  
5. Emitter  
6. Collector  
Note:  
Pin 3 is identified with a circle on the bottom of the package.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NE696M01  
M01  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
ICBO  
IEBO  
Collector Cutoff Current at VCB = 5 V, IE = 0  
µA  
µA  
0.1  
0.1  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
1
hFE  
Forward Current Gain at VCE = 3 V, IC = 10 mA  
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz  
80  
120  
14  
160  
fT  
GHz  
pF  
Cre2  
|S21E|2  
NF  
0.15  
14  
dB  
dB  
1.6  
Notes:  
1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.  
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.  
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.  
California Eastern Laboratories  

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