Datasheet > NE696M01-T1

NE696M01-T1

更新时间： 2024-11-01 14:43:55

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	105K
描述
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINI MOLD, ULTRA SMALL PACKAGE-6

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技术参数
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NE696M01-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.89	最大集电极电流 (IC)：	0.03 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.15 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

NE696M01-T1 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE696M01

FEATURES

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE M01

•

HIGH fT:

14 GHz TYP at 3 V, 10 mA

TOP VIEW

LOW NOISE FIGURE:

NF = 1.6 dB TYP at 2 GHz

2.1 ± 0.1

1.25 ± 0.1

HIGH GAIN:

|S21E|²= 14 dB TYP at 2 GHz

•

6 PIN SMALL MINI MOLD PACKAGE

0.65

EXCELLENT LOW VOLTAGE, LOW CURRENT

PERFORMANCE

2.0 ± 0.2

0.2 (All Leads)

1.3

SIDE VIEW

DESCRIPTION

0.9 ± 0.1

NEC's NE696M01 is an NPN high frequency silicon epitaxial

transistor (NE685) encapsulated in an ultra small 6 pin SOT-

363 package. Its four emitter pins decrease emitter inductance

resulting in 3 dB more gain compared to conventional SOT-23

and SOT-143 devices. The NE696M01 is ideal for LNA and

pre-driverapplicationsupto2.4GHzwherelowcost,highgain,

low voltage and low current are prime considerations.

0.7

+0.10

- 0.05

0.15

0 ~ 0.1

PIN OUT

1. Emitter

2. Emitter

3. Base

4. Emitter

5. Emitter

6. Collector

Note:

Pin 3 is identified with a circle on the bottom of the package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE696M01

M01

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

Collector Cutoff Current at VCB = 5 V, IE = 0

µA

0.1

Emitter Cutoff Current at VEB = 1 V, IC = 0

hFE

Forward Current Gain at VCE = 3 V, IC = 10 mA

Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz

120

160

GHz

Cre²

|S21E|²

0.15

1.6

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.

California Eastern Laboratories

12 3 4 5 6

中文翻译

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与NE696M01-T1相关器件

型号	品牌	获取价格	描述	数据表
NE696M01-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE698M01	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
NE698M01-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
NE699M01	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NE699M01-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NE6FAAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6FAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6MAAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6MAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE701D	PHILIPS	获取价格	Prescaler, ECL, PDSO8,

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