Datasheet > NE698M01

NE698M01

更新时间： 2024-10-31 22:25:35

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波
页数	文件大小	规格书
8页	64K
描述
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NE698M01 技术参数

生命周期：	Obsolete	包装说明：	M01, 6 PIN
Reach Compliance Code：	unknown	风险等级：	5.84
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.01 A
最高频带：	L BAND	JESD-30 代码：	R-PDSO-G6
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	17000 MHz	Base Number Matches：	1

NE698M01 数据手册

PRELIMINARY DATA SHEET

NPN EPITAXIAL SILICON

TRANSISTOR FOR MICROWAVE

HIGH-GAIN AMPLIFICATION

NE698M01

FEATURES

OUTLINE DIMENSIONS(Units in mm)

PACKAGE OUTLINE M01

TOP VIEW

•

HIGH fT:

17 GHz TYP at 2 V, 7 mA

LOW NOISE FIGURE:

NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA

2.1 ± 0.1

1.25 ± 0.1

HIGH GAIN:

|S21E|²= 15.5 dB TYP at f =2 GHz

0.65

•

6 PIN SMALL MINI MOLD PACKAGE

EXCELLENT LOW VOLTAGE,

2.0 ± 0.2

0.2 (All Leads)

1.3

LOW CURRENT PERFORMANCE

0.9 ± 0.1

DESCRIPTION

0.7

+0.10

0.15

- 0.05

The NE698M01 is an NPN high frequency silicon epitaxial

transistor (NE686) encapsulated in an ultra small 6 pin SOT-

363 package. Its four emitter pins decrease emitter inductance

resulting in 3 dB more gain compared to conventional SOT-23

and SOT-143 devices. The NE698M01 is ideal for LNA and

pre-driverapplicationsupto2.4GHzwherelowcost,highgain,

low voltage and low current are prime considerations.

0 ~ 0.1

PIN CONNECTIONS

1. Emitter

2. Emitter

3. Base

4. Emitter

5. Emitter

6. Collector

Note: Pin 3 is identified with a circle on the bottom of the package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE698M01

M01

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

µA

MIN

TYP

MAX

0.1

ICBO

IEBO

Collector Cutoff Current at VCB = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain at VCE = 2 V, IC = 7 mA

µA

0.1

hFE

140

Gain Bandwidth Product at VCE = 2 V, IC=7mA, f = 2.0GHz GHz

0.1

CRE

Feedback Capacitance at VCB = 2 V, IE=0, f=1 MHz

Insertion Power Gain at VCE = 2 V, IC = 7 mA, f = 2.0 GHz

Noise Figure at VCE = 2 V, IC = 1 mA, f = 2.0 GHz

0.15

1.8

|S21E|²

15.5

1.1

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

California Eastern Laboratories

12 3 4 5 6 7 8

中文翻译

下载PDF

与NE698M01相关器件

型号	品牌	获取价格	描述	数据表
NE698M01-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
NE699M01	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NE699M01-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NE6FAAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6FAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6MAAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6MAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE701D	PHILIPS	获取价格	Prescaler, ECL, PDSO8,
NE702D	NXP	获取价格	IC PRESCALER, PDSO8, 0.157 INCH, PLASTIC, SOP-8, Prescaler/Multivibrator
NE702D	PHILIPS	获取价格	Prescaler, ECL, PDSO8,

与NE698M01相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

NE698M01

NE698M01 技术参数

NE698M01 数据手册

与NE698M01相关器件

与NE698M01相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NE698M01

NE698M01 技术参数

NE698M01 数据手册

与NE698M01相关器件

与NE698M01相关文章

您还可以找

您在本页遇到什么问题？