NE699M01

更新时间： 2024-10-31 22:25:39

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管微波光电二极管
页数	文件大小	规格书
6页	54K
描述
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

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中文翻译

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技术参数
数据手册

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NE699M01 技术参数

生命周期：	Obsolete	包装说明：	M01, 6 PIN
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.03 A	最高频带：	L BAND
JESD-30 代码：	R-PDSO-G6	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	16000 MHz
Base Number Matches：	1

NE699M01 数据手册

PRELIMINARY DATA SHEET

NPN EPITAXIAL SILICON

TRANSISTOR FOR MICROWAVE

HIGH-GAIN AMPLIFICATION

NE699M01

FEATURES

OUTLINE DIMENSIONS(Units in mm)

PACKAGE OUTLINE M01

•

HIGH fT:

16 GHz TYP at 2 V, 20 mA

TOP VIEW

2.1 ± 0.1

LOW NOISE FIGURE:

NF = 1.1 dB TYP at 2 GHz

1.25 ± 0.1

HIGH GAIN:

|S21E|²= 14 dB TYP at f =2 GHz

0.65

•

6 PIN SMALL MINI MOLD PACKAGE

2.0 ± 0.2

0.2 (All Leads)

EXCELLENT LOW VOLTAGE,

LOW CURRENT PERFORMANCE

1.3

DESCRIPTION

The NE699M01 is an NPN high frequency silicon epitaxial

transistor (NE687) encapsulated in an ultra small 6 pin SOT-

363 package. Its four emitter pins decrease emitter inductance

resulting in 3 dB more gain compared to conventional SOT-23

and SOT-143 devices. The NE699M01 is ideal for LNA and

pre-driverapplicationsupto2.4GHzwherelowcost,highgain,

low voltage and low current are prime considerations.

0.9 ± 0.1

0.7

+0.10

- 0.05

0.15

0 ~ 0.1

PIN CONNECTIONS

1. Emitter

2. Emitter

3. Base

4. Emitter

5. Emitter

6. Collector

Note: Pin 3 is identified with a circle on the bottom of the package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE699M01

M01

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

µA

MIN

TYP

MAX

0.1

ICBO

IEBO

Collector Cutoff Current at VCB = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain at VCE = 2 V, IC = 20 mA

µA

0.1

hFE

140

Gain Bandwidth Product at VCE = 2 V, I

Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2.0 GHz dB

Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz dB

= 20mA, f = 2.0GHz GHz

0.2

CRE

0.3

1.8

|S21E|²

1.1

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

California Eastern Laboratories

12 3 4 5 6

中文翻译

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与NE699M01相关器件

型号	品牌	获取价格	描述	数据表
NE699M01-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NE6FAAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6FAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6MAAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE6MAH0-0-B	ETC	获取价格	N e u t r i k Â® P a r t N u m b e r G u i d
NE701D	PHILIPS	获取价格	Prescaler, ECL, PDSO8,
NE702D	NXP	获取价格	IC PRESCALER, PDSO8, 0.157 INCH, PLASTIC, SOP-8, Prescaler/Multivibrator
NE702D	PHILIPS	获取价格	Prescaler, ECL, PDSO8,
NE702D-T	NXP	获取价格	IC PRESCALER, PDSO8, 0.157 INCH, PLASTIC, SOP-8, Prescaler/Multivibrator
NE702N	PHILIPS	获取价格	Prescaler, ECL, PDIP8

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