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NE698M01-T1 PDF预览

NE698M01-T1

更新时间: 2024-11-22 22:25:35
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管开关微波光电二极管
页数 文件大小 规格书
8页 64K
描述
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION

NE698M01-T1 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84最大集电极电流 (IC):0.01 A
基于收集器的最大容量:0.15 pF集电极-发射极最大电压:3 V
配置:SINGLE最高频带:S BAND
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):17000 MHz
Base Number Matches:1

NE698M01-T1 数据手册

 浏览型号NE698M01-T1的Datasheet PDF文件第2页浏览型号NE698M01-T1的Datasheet PDF文件第3页浏览型号NE698M01-T1的Datasheet PDF文件第4页浏览型号NE698M01-T1的Datasheet PDF文件第5页浏览型号NE698M01-T1的Datasheet PDF文件第6页浏览型号NE698M01-T1的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
NPN EPITAXIAL SILICON  
TRANSISTOR FOR MICROWAVE  
HIGH-GAIN AMPLIFICATION  
NE698M01  
FEATURES  
OUTLINE DIMENSIONS(Units in mm)  
PACKAGE OUTLINE M01  
TOP VIEW  
HIGH fT:  
17 GHz TYP at 2 V, 7 mA  
LOW NOISE FIGURE:  
NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA  
2.1 ± 0.1  
1.25 ± 0.1  
HIGH GAIN:  
|S21E|2 = 15.5 dB TYP at f =2 GHz  
1
2
6
5
0.65  
6 PIN SMALL MINI MOLD PACKAGE  
EXCELLENT LOW VOLTAGE,  
2.0 ± 0.2  
0.2 (All Leads)  
1.3  
LOW CURRENT PERFORMANCE  
3
4
0.9 ± 0.1  
DESCRIPTION  
0.7  
+0.10  
0.15  
- 0.05  
The NE698M01 is an NPN high frequency silicon epitaxial  
transistor (NE686) encapsulated in an ultra small 6 pin SOT-  
363 package. Its four emitter pins decrease emitter inductance  
resulting in 3 dB more gain compared to conventional SOT-23  
and SOT-143 devices. The NE698M01 is ideal for LNA and  
pre-driverapplicationsupto2.4GHzwherelowcost,highgain,  
low voltage and low current are prime considerations.  
0 ~ 0.1  
PIN CONNECTIONS  
1. Emitter  
2. Emitter  
3. Base  
4. Emitter  
5. Emitter  
6. Collector  
Note: Pin 3 is identified with a circle on the bottom of the package.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NE698M01  
M01  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
µA  
MIN  
TYP  
MAX  
0.1  
ICBO  
IEBO  
Collector Cutoff Current at VCB = 5 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
DC Current Gain at VCE = 2 V, IC = 7 mA  
µA  
0.1  
1
hFE  
70  
13  
140  
fT  
Gain Bandwidth Product at VCE = 2 V, IC=7mA, f = 2.0GHz GHz  
17  
0.1  
2
CRE  
Feedback Capacitance at VCB = 2 V, IE=0, f=1 MHz  
Insertion Power Gain at VCE = 2 V, IC = 7 mA, f = 2.0 GHz  
Noise Figure at VCE = 2 V, IC = 1 mA, f = 2.0 GHz  
pF  
dB  
dB  
0.15  
1.8  
|S21E|2  
15.5  
1.1  
NF  
Notes:  
1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.  
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.  
California Eastern Laboratories  

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