NE69039-T1

更新时间： 2024-10-31 21:55:27

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管
页数	文件大小	规格书
2页	30K
描述
NPN SILICON EPITAXIAL TRANSISTOR

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中文翻译

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数据手册

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NE69039-T1 数据手册

PRELIMINARY DATA SHEET

NPN SILICON EPITAXIAL TRANSISTOR

NE69039

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• OUTPUT POWER AT 1dB COMPRESSION POINT:

27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,

Duty 1/8

PACKAGE OUTLINE 39

+0.2

-0.3

• 4 PIN MINI MOLD PACKAGE: NE69039

2.8

+0.10

-0.05

(LEADS 2, 3, 4)

+0.2

-0.1

0.4

1.5

2.9 ± 0.2 0.95

1.9

0.85

1) Collector

2) Emitter

3) Base

+0.10

-0.05

DESCRIPTION

0.6

The NE69039 is a low voltage, NPN Silicon Bipolar Transistor

for pulsed power applications. The device is designed to op-

erate from a 3.6 V supply, and deliver over 1/2 watt of power

output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These

characteristics make it an ideal device for TX output stage in a

1.9 GHZ digital cordless telephone (DECT or PHS). The part

is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package

and is available on tape and reel.

4) Emitter

+0.2

-0.1

1.1

0.8

+0.10

-0.06

0.16

5˚

0 to 0.1

The NE69039 transistors are manufactured to NEC's stringent

quality assurance standards to ensure highest reliability and

consistent superior performance.

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PART NUMBER

NE69039

PACKAGE CODE

SYMBOLS

ICBO

PARAMETERS

UNITS

µA

MIN

TYP

MAX

2.5

Collector Cutoff Current, VCB = 5 V, IE = 0

Emitter Cutoff Current, VEB = 1 V, IC = 0

DC Current Gain, VCE = 3.6 V, IC = 100 mA

IEBO

µA

2.5

hFE

P-1

Output Power

dBm

27.5

6.0

VCE = 3.6 V, f = 1.9 GHZ

ICq = 1 mA (Class AB)

Duty 1/8

Power Gain

5.0

η_C

Collector Efficiency

TON

Maximum Device On Time

10.0

California Eastern Laboratories

中文翻译

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