Datasheet > NE69039

NE69039

更新时间： 2024-11-23 03:46:43

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
3页	152K
描述
NPN SILICON EPITAXIAL TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE69039 数据手册

NEC'S NPN SILICON EPITAXIAL

TRANSISTOR

NE69039

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• OUTPUT POWER AT 1dB COMPRESSION POINT:

27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,

Duty 1/8

PACKAGE OUTLINE 39

+0.2

-0.3

• 4 PIN MINI MOLD PACKAGE: NE69039

2.8

+0.10

-0.05

+0.2

-0.1

0.4

1.5

(LEADS 2, 3, 4)

2.9 ± 0.2 0.95

1.9

0.85

1) Collector

+0.10

-0.05

DESCRIPTION

2) Emitter

3) Base

0.6

NEC's NE69039 is a low voltage, NPN Silicon Bipolar Tran-

sistor for pulsed power applications. The device is designed

to operate from a 3.6 V supply, and deliver over 1/2 watt of

power output at frequencies up to 2.0 GHZ with a 1:8 duty

cycle. These characteristics make it an ideal device for TX

output stage in a 1.9 GHZ digital cordless telephone (DECT or

PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-

mold package and is available on tape and reel.

4) Emitter

+0.2

-0.1

1.1

0.8

+0.10

-0.06

0.16

5˚

0 to 0.1

The NE69039 transistors are manufactured to NEC's stringent

quality assurance standards to ensure highest reliability and

consistent superior performance.

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PART NUMBER

NE69039

PACKAGE CODE

SYMBOLS

ICBO

PARAMETERS

UNITS

µA

MIN

TYP

MAX

2.5

Collector Cutoff Current, VCB = 5 V, IE = 0

Emitter Cutoff Current, VEB = 1 V, IC = 0

DC Current Gain, VCE = 3.6 V, IC = 100 mA

IEBO

µA

2.5

hFE

P-1

Output Power

dBm

27.5

6.0

VCE = 3.6 V, f = 1.9 GHZ

ICq = 1 mA (Class AB)

Duty 1/8

Power Gain

5.0

η_C

Collector Efficiency

TON

Maximum Device On Time

10.0

California Eastern Laboratories

12 3

中文翻译

下载PDF

与NE69039相关器件

型号	品牌	获取价格	描述	数据表
NE69039-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR
NE69039-T1-A	CEL	获取价格	NPN SILICON EPITAXIAL TRANSISTOR
NE69039-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, S
NE69039-T1FB-A	NEC	获取价格	暂无描述
NE696M01	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE696M01-T1	RENESAS	获取价格	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINI MOLD, ULTRA SMALL PACKAGE-6
NE696M01-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE698M01	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
NE698M01-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
NE699M01	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION