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NE68830-T1 PDF预览

NE68830-T1

更新时间： 2024-11-18 21:54:11
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
19页 231K
描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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NE68830-T1 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84其他特性：LOW NOISE
最大集电极电流 (IC)：0.1 A基于收集器的最大容量：0.85 pF
集电极-发射极最大电压：6 V配置：SINGLE
最高频带：C BANDJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：9000 MHzBase Number Matches：1

NE68830-T1 数据手册

 浏览型号NE68830-T1的Datasheet PDF文件第2页浏览型号NE68830-T1的Datasheet PDF文件第3页浏览型号NE68830-T1的Datasheet PDF文件第4页浏览型号NE68830-T1的Datasheet PDF文件第5页浏览型号NE68830-T1的Datasheet PDF文件第6页浏览型号NE68830-T1的Datasheet PDF文件第7页 
SURFACE MOUNT NPN SILICON  
HIGH FREQUENCY TRANSISTOR  
NE688  
SERIES  
FEATURES  
• LOW PHASE NOISE DISTORTION  
• LOW NOISE: 1.5 dB at 2.0 GHz  
• LOW VOLTAGE OPERATION  
• LARGE ABSOLUTE MAXIMUM COLLECTOR  
CURRENT: IC MAX = 100 mA  
19 (3 PIN ULTRA SUPER  
MINI MOLD)  
18 (SOT 343 STYLE)  
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE  
MOUNT PACKAGE STYLES  
• ALSO AVAILABLE IN CHIP FORM  
DESCRIPTION  
The NE688 series of NPN epitaxial silicon transistors are  
designedforlowcostamplifierandoscillatorapplications. Low  
noise figures, high gain and high current capability equate to  
wide dynamic range and excellent linearity. NE688's low  
phase noise distortion and high fT make it an excellent choice  
for oscillator applications up to 5 GHz. The NE688 series is  
available in six different low cost plastic surface mount pack-  
age styles, and in chip form.  
30 (SOT 323 STYLE)  
33 (SOT 23 STYLE)  
9R (SOT 143R STYLE)  
(SOT 143 STYLE)  
ELECTRICAL CHARACTERISTICS (TA = 5°
PART NUMER
EIAJ2 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE688  
2SC5194  
18  
NE68819  
2SC5195  
19  
NE68830  
2SC5193  
30  
NE68833  
2SC5191  
33  
NE68839/39R  
2SC5192/92R  
39  
SYMBOLS PARAMETERANCONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX  
fT  
Gain Bndwidth Product at  
VCE = 1V, IC = 3 mA, f = 2.GHz  
GHz  
GHz  
B  
4
5
4.5  
5
4
4.5  
4
4.5  
4
4.5  
fT  
Gain BanwiPrduct at  
VCE = 3VC = 20 mA, f = 2.0 G
10  
9.5  
9
8.5  
9
NFMIN  
NFMIN  
Minimum Noise Figur
VCE = 1 VC 3 A, f = 2.0 GHz  
1.7 2.5  
1.7 2.5  
1.5  
1.7 2.5  
1.5  
1.7 2.5  
1.5  
1.7 2.5  
1.5  
Minimum Noise Figure at  
VCE = 3 V, IC = 7 mA, f = 0 z  
dB  
2
|S21E|  
|S21E|  
hFE  
Insertion PoGan at  
VCE = 1V, IC = 3 mA, f = 2.0 GH
dB  
3.0 4.0  
8.5  
3.0 4.0  
8
2.5 3.5  
6.5  
2.5 3.5  
6.5  
4.0 4.5  
9
2
Insertion Power Gain at  
VCE = 3V, IC = 0 mAf = 2.0 GHz  
Forward Current Gain3 at  
VCE = 1 V, IC = 3 mA  
dB  
80  
160 80  
160 80  
160 80  
160 80  
160  
100  
100  
ICBO  
IEBO  
Collector Cutoff Current  
at VCB = 5 V, IE = 0 mA  
nA  
nA  
100  
100  
100  
100  
100  
100  
100  
100  
Emitter Cutoff Current  
at VEB = 1 V, IC = 0 mA  
4
CRE  
Feedback Capacitance at  
VCB = 1 V, IE = 0 mA, f = 1 MHz  
pF  
0.65 0.8  
150  
0.7 0.8  
125  
0.75 0.85  
150  
0.75 0.85  
200  
0.65 0.8  
200  
PT  
Total Power Dissipation  
mW  
RTH(J-A)  
Thermal Resistance  
(Junction to Ambient)  
°C/W  
833  
1000  
833  
625  
625  
RTH(J-C)  
Thermal Resistance(Junction to Case) °C/W  
Notes:  
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.  
1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal of  
2. Electronic Industrial Association of Japan. the 3 terminal capacitance bridge.  
California Eastern Laboratories  
1234567...19

中文翻译

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