Datasheet > 晶体管 > 射频小信号双极晶体管> NE68839-T1-A

NE68839-T1-A

更新时间： 2024-11-01 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
20页	348K
描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE68839-T1-A 数据手册

SURFACE MOUNT NPN SILICON

HIGH FREQUENCY TRANSISTOR

NE688

SERIES

FEATURES

• LOW PHASE NOISE DISTORTION

• LOW NOISE: 1.5 dB at 2.0 GHz

• LOW VOLTAGE OPERATION

• LARGE ABSOLUTE MAXIMUM COLLECTOR

CURRENT: IC MAX = 100 mA

19 (3 PIN ULTRA SUPER

MINI MOLD)

18 (SOT 343 STYLE)

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

MOUNT PACKAGE STYLES

• ALSO AVAILABLE IN CHIP FORM

DESCRIPTION

NEC's NE688 series of NPN epitaxial silicon transistors are

designedforlowcostamplifierandoscillatorapplications. Low

noise figures, high gain and high current capability equate to

wide dynamic range and excellent linearity. NE688's low

phase noise distortion and high fT make it an excellent choice

for oscillator applications up to 5 GHz. The NE688 series is

available in six different low cost plastic surface mount pack-

age styles, and in chip form.

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

39R (SOT 143R STYLE)

39 (SOT 143 STYLE)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER¹

EIAJ²REGISTERED NUMBER

PACKAGE OUTLINE

NE68818

2SC5194

NE68819

2SC5195

NE68830

2SC5193

NE68833

2SC5191

NE68839/39R

2SC5192/92R

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

Gain Bandwidth Product at

VCE = 1V, IC = 3 mA, f = 2.0 GHz

GHz

4.5

Gain Bandwidth Product at

VCE = 3V, IC = 20 mA, f = 2.0 GHz

9.5

8.5

NFMIN

Minimum Noise Figure at

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

1.7 2.5

1.5

1.7 2.5

1.5

1.7 2.5

1.5

1.7 2.5

1.5

1.7 2.5

1.5

Minimum Noise Figure at

VCE = 3 V, IC = 7 mA, f = 2.0 GHz

|S21E|

hFE

Insertion Power Gain at

VCE = 1V, IC = 3 mA, f = 2.0 GHz

3.0 4.0

8.5

3.0 4.0

2.5 3.5

6.5

2.5 3.5

6.5

4.0 4.5

Insertion Power Gain at

VCE = 3V, IC = 20 mA, f = 2.0 GHz

Forward Current Gain³at

VCE = 1 V, IC = 3 mA

160 80

160

100

ICBO

IEBO

Collector Cutoff Current

at VCB = 5 V, IE = 0 mA

100

Emitter Cutoff Current

at VEB = 1 V, IC = 0 mA

CRE

Feedback Capacitance at

VCB = 1 V, IE = 0 mA, f = 1 MHz

0.65 0.8

150

0.7 0.8

125

0.75 0.85

150

0.75 0.85

200

0.65 0.8

200

Total Power Dissipation

RTH(J-A)

Thermal Resistance

(Junction to Ambient)

°C/W

833

1000

833

625

RTH(J-C)

Thermal Resistance(Junction to Case) °C/W

Notes:

3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.

1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal of

2. Electronic Industrial Association of Japan. the 3 terminal capacitance bridge.

California Eastern Laboratories

12 3 4 5 6 7...20

中文翻译

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与NE68839-T1-A相关器件

型号	品牌	获取价格	描述	数据表
NE688M03	NEC	获取价格	NPN SILICON TRANSISTOR
NE688M13	NEC	获取价格	NPN SILICON TRANSISTOR
NE688M23	NEC	获取价格	NPN SILICON TRANSISTOR
NE688M23	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, CERAMIC, M
NE68939	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR
NE68939	CEL	获取价格	NPN SILICON EPITAXIAL TRANSISTOR
NE68939-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR
NE68939-T1-A	CEL	获取价格	NPN SILICON EPITAXIAL TRANSISTOR
NE68939-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, SC-61, 4
NE68939-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, SC-61, 4

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