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NE688M23 PDF预览

NE688M23

更新时间: 2024-11-18 22:24:11
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管放大器
页数 文件大小 规格书
2页 22K
描述
NPN SILICON TRANSISTOR

NE688M23 技术参数

生命周期:Obsolete包装说明:CHIP CARRIER, R-CBCC-N3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N其他特性:LOW NOISE
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:6 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5000 MHz
Base Number Matches:1

NE688M23 数据手册

 浏览型号NE688M23的Datasheet PDF文件第2页 
PRELIMINARY DATA SHEET  
NPN SILICON TRANSISTOR NE688M23  
OUTLINE DIMENSIONS (Units in mm)  
FEATURES  
PACKAGE OUTLINE M03  
NEW MINIATURE M23 PACKAGE:  
– World's smallest transistor package footprint —  
leads are completely underneath package body  
– Low profile/0.55 mm package height  
0.5  
1
– Ceramic substrate for better RF performance  
HIGH GAIN BANDWIDTH PRODUCT:  
0.25  
0.4  
fT = 9.5 GHz  
LOW NOISE FIGURE:  
NF = 1.7 dB at 2 GHz  
HIGH COLLECTOR CURRENT:  
IC MAX = 100 mA  
2
0.25  
3
0.2  
0.15  
0.15  
DESCRIPTION  
0.6  
The NE688M23 transistor is designed for low cost amplifier  
andoscillatorapplications.Lownoisefigure,highgainandhigh  
current capability equate to wide dynamic range and excellent  
linearity. NEC's new low profile/ceramic substrate style "M23"  
package is ideal for today's portable wireless applications. The  
NE688 is also available in chip and six different low cost plastic  
surface mount package styles.  
BOTTOM VIEW  
PIN CONNECTIONS  
1. Collector  
2. Emitter  
3. Base  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
EIAJ1 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE688M23  
2SC5651  
M23  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
fT  
Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz  
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz  
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz  
Forward Current Gain at VCE = 1 V, IC = 3 mA  
Collector Cutoff Current at VCB = 5 V, IE = 0  
GHz  
dB  
4
5
1.9  
4
NF  
|S21E|2  
2.5  
dB  
3
2
hFE  
80  
145  
0.1  
0.1  
0.8  
ICBO  
IEBO  
µA  
µA  
pF  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
3
CRE  
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz  
0.7  
Notes:  
1. Electronic Industrial Association of Japan.  
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.  
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.  
California Eastern Laboratories  

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