Datasheet > NE687M03A

NE687M03A

更新时间： 2024-11-01 19:58:47

品牌	Logo	应用领域
日电电子 - NEC		光电二极管晶体管
页数	文件大小	规格书
3页	126K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,

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技术参数
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NE687M03A 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.71	其他特性：	LOW NOISE
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.03 A
基于收集器的最大容量：	0.8 pF	集电极-发射极最大电压：	3 V
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	14000 MHz
Base Number Matches：	1

NE687M03A 数据手册

NEC's

NE687M03

NPN SILICON TRANSISTOR

FEATURES

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE M03

•

NEW M03 PACKAGE:

1.2±±.±0

• Smallest transistor outline package available

• Low proﬁle/0.59 mm package height

• Flat lead style for better RF performance

±.8±±.1

•

HIGH GAIN BANDWIDTH PRODUCT:

fT = 14 GHz

1.4 ±±.1

(±.9)

±.40

LOW NOISE FIGURE:

NF = 1.4 dB at 2 GHz

+±.1

-±

±.3

+±.1

±.2

-±

DESCRIPTION

NEC's NE687M03 transistor is designed for low noise, high

gain, and low cost requirements. This high fT part is well suited

for very low voltage/low current designs for portable wireless

communications and cellular radio applications. NEC's new

low proﬁle/ﬂat lead style "M03" package is ideal for today's

portable wireless applications. The NE687 is also available in

six different low cost plastic surface mount package styles.

±.09±±.±0

+±.1

±.10

-±.±0

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE687M03

2SC5436

M03

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

GHz

Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz

VCE = 1 V, IC = 3 mA, f = 2 GHz

1.3

|S21E|²

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

8.5

9.0

hFE²

ICBO

IEBO

CRE³

Forward Current Gain at VCE = 2 V, IC = 20 mA

Collector Cutoff Current at VCB = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

130

0.1

0.8

μA

Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz

0.4

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

12 3

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NE687M33-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, SUPER MIN

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