Datasheet > NE687M33-T3FB-A

NE687M33-T3FB-A

更新时间： 2024-01-26 23:29:46

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	55K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-3

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NE687M33-T3FB-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

NE687M33

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN SUPER LEAD-LESS MINIMOLD (M33)

FEATURES

•

Low noise

NF = 1.5 dB TYP. @ V^CE= 1 V, IC = 3 mA, f = 2 GHz

3-pin super lead-less minimold (M33) package

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

NE687M33

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

NE687M33-T3

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

5.0

3.0

2.0

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

−65 to +150

Tstg

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10342EJ02V0DS (2nd edition)

Date Published August 2003 CP(K)

The mark shows major revised points.

Printed in Japan

12 3 4 5 6 7

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