SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE687
SERIES
FEATURES
• LOW NOISE: 1.3 dB AT 2.0 GHz
• LOW VOLTAGE OPERATION
• EASY TO MATCH
19 (3 PIN ULTRA SUPER
MINI MOLD)
18 (SOT 343 STYLE)
• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
DESCRIPTION
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
The NE687 series of NPN epitaxial silicon transistors are
designed for low cost, low noise applications. Excellent perfor-
mance at low voltage/low current makes this series an ideal
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. TheNE687dieisavailableinsixdifferentlowcostplastic
surface mount package styles.
39R (SOT 143R STYLE)
39 (SOT 143 STYLE)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER1
EIAJ2 REGISTERED NUMBER
PACKAGE OUTLINE
NE68718
2SC5185
18
NE68719
2SC5186
19
NE68730
2SC5184
30
NE68733
2SC5182
33
NE68739/39R
2SC5183/83R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
GHz 10 13
9
7
11
9
7
11
9
7
12
7.5 10
fT
Gain Bandwidth Product at
VCE = 1 V, IC = 10 mA, f = 2.0 GHz
GHz
dB
8
11
9
9
10
7
8.5
NFMIN
NFMIN
Minimum Noise Figure at
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
1.3 2.0
1.3 2.0
1.3 2.0
1.3 2.0
1.3 2.0
8.5
1.3 2.0
1.3 2.0
8.5
1.3 2.0
1.3 2.0
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
dB
1.3 2.0
2
|S21e|
Insertion Power Gain at
VCE = 2V, IC =20 mA, f = 2.0 GHz
dB
8
11
9
8.5 10
7.5
7
6
7
6
7.5 10
8.5
2
|S21e|
Insertion Power Gain at
VCE = 1V, IC =10 mA, f = 2.0 GHz
Forward Current Gain3 at
VCE = 2 V, IC = 20 mA
dB
7.5
70
6
7.5
7.5
7
hFE
ICBO
IEBO
140 70
100
140 70
100
140 70
100
140 70
100
140
100
100
CollectorCutoffCurrent
at VCB = 5 V, IE = 0 mA
nA
nA
EmitterCutoffCurrent
at VEB = 1 V, IC = 0 mA
100
100
100
100
4
CRE
FeedbackCapacitanceat
VCB = 2 V, IE = 0 mA, f = 1 MHz
pF
0.3 0.6
0.4 0.8
90
0.4 0.8
0.4 0.8
0.4 0.8
90
PT
TotalPowerDissipation
mW
90
90
90
RTH(J-A)
ThermalResistance
(Junction to Ambient)
°C/W
°C/W
833
1250
833
625
625
RTH(J-C)
ThermalResistance
(Junction to Case)
Notes:
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
California Eastern Laboratories