Datasheet > NE6873939R

NE6873939R

更新时间： 2024-11-12 22:45:23

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
21页	196K
描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE6873939R 数据手册

SURFACE MOUNT NPN SILICON

HIGH FREQUENCY TRANSISTOR

NE687

SERIES

FEATURES

• LOW NOISE: 1.3 dB AT 2.0 GHz

• LOW VOLTAGE OPERATION

• EASY TO MATCH

19 (3 PIN ULTRA SUPER

MINI MOLD)

18 (SOT 343 STYLE)

• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

MOUNT PACKAGE STYLES

DESCRIPTION

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

The NE687 series of NPN epitaxial silicon transistors are

designed for low cost, low noise applications. Excellent perfor-

mance at low voltage/low current makes this series an ideal

choice for portable wireless applications at 1.6, 1.9 and 2.4

GHz. TheNE687dieisavailableinsixdifferentlowcostplastic

surface mount package styles.

39R (SOT 143R STYLE)

39 (SOT 143 STYLE)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER¹

EIAJ²REGISTERED NUMBER

PACKAGE OUTLINE

NE68718

2SC5185

NE68719

2SC5186

NE68730

2SC5184

NE68733

2SC5182

NE68739/39R

2SC5183/83R

39/39R

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

Gain Bandwidth Product at

VCE = 2 V, IC = 20 mA, f = 2.0 GHz

GHz 10 13

7.5 10

Gain Bandwidth Product at

VCE = 1 V, IC = 10 mA, f = 2.0 GHz

GHz

8.5

NFMIN

Minimum Noise Figure at

VCE = 2 V, IC = 3 mA, f = 2.0 GHz

1.3 2.0

8.5

1.3 2.0

8.5

1.3 2.0

Minimum Noise Figure at

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

1.3 2.0

|S21e|

Insertion Power Gain at

VCE = 2V, IC =20 mA, f = 2.0 GHz

8.5 10

7.5

7.5 10

8.5

|S21e|

Insertion Power Gain at

VCE = 1V, IC =10 mA, f = 2.0 GHz

Forward Current Gain³at

VCE = 2 V, IC = 20 mA

7.5

hFE

ICBO

IEBO

140 70

100

140 70

100

140 70

100

140 70

100

140

100

CollectorCutoffCurrent

at VCB = 5 V, IE = 0 mA

EmitterCutoffCurrent

at VEB = 1 V, IC = 0 mA

100

CRE

FeedbackCapacitanceat

VCB = 2 V, IE = 0 mA, f = 1 MHz

0.3 0.6

0.4 0.8

TotalPowerDissipation

RTH(J-A)

ThermalResistance

(Junction to Ambient)

°C/W

833

1250

833

625

RTH(J-C)

ThermalResistance

(Junction to Case)

Notes:

3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.

1. Precaution: Devices are ESD sensitive. Use proper handling procedures.

2. Electronic Industrial Association of Japan.

4. The emitter terminal should be connected to the ground terminal

of the 3 terminal capacitance bridge.

California Eastern Laboratories

12 3 4 5 6 7...21

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与NE6873939R相关器件

型号	品牌	获取价格	描述	数据表
NE68739R	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC,
NE68739R-T1	NEC	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68739R-T1	CEL	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68739R-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
NE68739-T1	CEL	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68739-T1	NEC	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68739-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
NE687M03	CEL	获取价格	NECs NPN SILICON TRANSISTOR
NE687M03	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,
NE687M03A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,

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