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NE68630-T1 PDF预览

NE68630-T1

更新时间： 2024-09-25 03:46:43
品牌 Logo 应用领域
CEL 晶体晶体管光电二极管放大器
页数 文件大小 规格书
12页 258K
描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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NE68630-T1 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.84
其他特性：LOW NOISE最大集电极电流 (IC)：0.01 A
基于收集器的最大容量：0.6 pF集电极-发射极最大电压：3 V
配置：SINGLE最小直流电流增益 (hFE)：70
最高频带：C BANDJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：9000 MHz
Base Number Matches：1

NE68630-T1 数据手册

 浏览型号NE68630-T1的Datasheet PDF文件第2页浏览型号NE68630-T1的Datasheet PDF文件第3页浏览型号NE68630-T1的Datasheet PDF文件第4页浏览型号NE68630-T1的Datasheet PDF文件第5页浏览型号NE68630-T1的Datasheet PDF文件第6页浏览型号NE68630-T1的Datasheet PDF文件第7页 
NE686  
SERIES  
SURFACE MOUNT NPN SILICON  
HIGH FREQUENCY TRANSISTOR  
FEATURES  
• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz  
• LOW VOLTAGE/LOW CURRENT OPERATION  
• HIGH INSERTION POWER GAIN:  
|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz  
|S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz  
18 (SOT 343 STYLE)  
19 (3 PIN ULTRA SUPER  
MINI MOLD)  
• LOW NOISE: 1.5 dB AT 2.0 GHz  
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE  
MOUNT PACKAGE STYLES  
DESCRIPTION  
NEC's NE686 series of NPN epitaxial silicon transistors are  
designed for low voltage/low current, amplifier and oscillator  
applications. NE686's high fT make it an excellent choice for  
portable wireless applications up to 5 GHz. The NE686 die is  
available in six different low cost plastic surface mount pack-  
age styles.  
30 (SOT 323 STYLE)  
33 (SOT 23 STYLE)  
39R (SOT 143R STYLE)  
39 (SOT 143 STYLE)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER1  
EIAJ2 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE68618  
2SC5180  
18  
NE68619  
2SC5181  
19  
NE68630  
2SC5179  
30  
NE68633  
2SC5177  
33  
NE68639/39R  
2SC5178/78R  
39/39R  
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX  
fT  
Gain Bandwidth Product at  
VCE = 2 V, IC = 7 mA, f = 2.0 GHz  
GHz 12 15.5  
GHz 10 13  
10  
8.5 12  
1.5 2.0  
13  
7.5  
7
9
10  
8.5 12  
1.5 2.0  
13  
10.5 13.5  
8.5 12  
fT  
Gain Bandwidth Product at  
VCE = 1 V, IC = 5 mA, f = 2.0 GHz  
8.5  
NFMIN  
NFMIN  
|S21e|2  
|S21e|2  
hFE  
Minimum Noise Figure at  
VCE = 2 V, IC = 3 mA, f = 2.0 GHz  
dB  
dB  
dB  
dB  
1.5 2.0  
1.5 2.0  
10 12  
1.5 2.0  
1.5 2.0  
9
1.5 2.0  
1.5 2.0  
9.5 11.5  
7.5 10.5  
140 70  
Minimum Noise Figure at  
VCE = 1 V, IC = 3 mA, f = 2.0 GHz  
1.5 2.0  
1.5 2.0  
Insertion Power Gain at  
VCE = 2V, IC =7 mA, f = 2.0 GHz  
8
7
10.5  
9
7.5  
7
7.5  
7
9
Insertion Power Gain at  
VCE = 1V, IC =5 mA, f = 2.0 GHz  
Forward Current Gain3 at  
VCE = 2 V, IC = 7 mA  
8.5 11  
70  
8.5  
8.5  
140 70  
100  
140 70  
100  
140 70  
100  
140  
100  
100  
ICBO  
Collector Cutoff Current  
at VCB = 5 V, IE = 0 mA  
nA  
nA  
100  
100  
IEBO  
Emitter Cutoff Current  
at VEB = 1 V, IC = 0 mA  
100  
100  
100  
4
CRE  
Feedback Capacitance at  
VCB = 2 V, IE = 0 mA, f = 1 MHz  
pF  
0.3 0.5  
0.4 0.6  
0.4 0.6  
0.5 0.6  
30  
0.3 0.5  
30  
PT  
Total Power Dissipation  
mW  
30  
30  
30  
RTH(J-A)  
Thermal Resistance  
(Junction to Ambient)  
°C/W  
833  
1250  
833  
625  
625  
RTH(J-C)  
Thermal Resistance(Junction to Case) °C/W  
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.  
2. Electronic Industrial Association of Japan.  
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.  
4. The emitter terminal should be connected to the ground terminal of  
the 3 terminal capacitance bridge.  
California Eastern Laboratories  
1234567...12

中文翻译

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NE68630-T1 替代型号

型号 品牌 替代类型 描述 数据表
2SC5065 TOSHIBA

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