NE686
SERIES
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz
|S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
• LOW NOISE: 1.5 dB AT 2.0 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
DESCRIPTION
NEC's NE686 series of NPN epitaxial silicon transistors are
designed for low voltage/low current, amplifier and oscillator
applications. NE686's high fT make it an excellent choice for
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39R (SOT 143R STYLE)
39 (SOT 143 STYLE)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER1
EIAJ2 REGISTERED NUMBER
PACKAGE OUTLINE
NE68618
2SC5180
18
NE68619
2SC5181
19
NE68630
2SC5179
30
NE68633
2SC5177
33
NE68639/39R
2SC5178/78R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
GHz 12 15.5
GHz 10 13
10
8.5 12
1.5 2.0
13
7.5
7
9
10
8.5 12
1.5 2.0
13
10.5 13.5
8.5 12
fT
Gain Bandwidth Product at
VCE = 1 V, IC = 5 mA, f = 2.0 GHz
8.5
NFMIN
NFMIN
|S21e|2
|S21e|2
hFE
Minimum Noise Figure at
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
dB
dB
dB
dB
1.5 2.0
1.5 2.0
10 12
1.5 2.0
1.5 2.0
9
1.5 2.0
1.5 2.0
9.5 11.5
7.5 10.5
140 70
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
1.5 2.0
1.5 2.0
Insertion Power Gain at
VCE = 2V, IC =7 mA, f = 2.0 GHz
8
7
10.5
9
7.5
7
7.5
7
9
Insertion Power Gain at
VCE = 1V, IC =5 mA, f = 2.0 GHz
Forward Current Gain3 at
VCE = 2 V, IC = 7 mA
8.5 11
70
8.5
8.5
140 70
100
140 70
100
140 70
100
140
100
100
ICBO
Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
nA
nA
100
100
IEBO
Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
100
100
100
4
CRE
Feedback Capacitance at
VCB = 2 V, IE = 0 mA, f = 1 MHz
pF
0.3 0.5
0.4 0.6
0.4 0.6
0.5 0.6
30
0.3 0.5
30
PT
Total Power Dissipation
mW
30
30
30
RTH(J-A)
Thermal Resistance
(Junction to Ambient)
°C/W
833
1250
833
625
625
RTH(J-C)
Thermal Resistance(Junction to Case) °C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories