Datasheet > NE686

NE686

更新时间： 2024-09-25 03:46:43

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
12页	258K
描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE686 数据手册

NE686

SERIES

SURFACE MOUNT NPN SILICON

HIGH FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz

• LOW VOLTAGE/LOW CURRENT OPERATION

• HIGH INSERTION POWER GAIN:

|S21E|²= 12 dB @ 2 V, 7 mA, 2 GHz

|S21E|²= 11 dB @ 1 V, 5 mA, 2 GHz

18 (SOT 343 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

• LOW NOISE: 1.5 dB AT 2.0 GHz

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

MOUNT PACKAGE STYLES

DESCRIPTION

NEC's NE686 series of NPN epitaxial silicon transistors are

designed for low voltage/low current, amplifier and oscillator

applications. NE686's high fT make it an excellent choice for

portable wireless applications up to 5 GHz. The NE686 die is

available in six different low cost plastic surface mount pack-

age styles.

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

39R (SOT 143R STYLE)

39 (SOT 143 STYLE)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER¹

EIAJ²REGISTERED NUMBER

PACKAGE OUTLINE

NE68618

2SC5180

NE68619

2SC5181

NE68630

2SC5179

NE68633

2SC5177

NE68639/39R

2SC5178/78R

39/39R

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

Gain Bandwidth Product at

VCE = 2 V, IC = 7 mA, f = 2.0 GHz

GHz 12 15.5

GHz 10 13

8.5 12

1.5 2.0

7.5

8.5 12

1.5 2.0

10.5 13.5

8.5 12

Gain Bandwidth Product at

VCE = 1 V, IC = 5 mA, f = 2.0 GHz

8.5

NFMIN

|S21e|²

hFE

Minimum Noise Figure at

VCE = 2 V, IC = 3 mA, f = 2.0 GHz

1.5 2.0

10 12

1.5 2.0

9.5 11.5

7.5 10.5

140 70

Minimum Noise Figure at

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

1.5 2.0

Insertion Power Gain at

VCE = 2V, IC =7 mA, f = 2.0 GHz

10.5

7.5

Insertion Power Gain at

VCE = 1V, IC =5 mA, f = 2.0 GHz

Forward Current Gain³at

VCE = 2 V, IC = 7 mA

8.5 11

8.5

140 70

100

140 70

100

140 70

100

140

100

ICBO

Collector Cutoff Current

at VCB = 5 V, IE = 0 mA

100

IEBO

Emitter Cutoff Current

at VEB = 1 V, IC = 0 mA

100

CRE

Feedback Capacitance at

VCB = 2 V, IE = 0 mA, f = 1 MHz

0.3 0.5

0.4 0.6

0.5 0.6

0.3 0.5

Total Power Dissipation

RTH(J-A)

Thermal Resistance

(Junction to Ambient)

°C/W

833

1250

833

625

RTH(J-C)

Thermal Resistance(Junction to Case) °C/W

Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.

2. Electronic Industrial Association of Japan.

3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.

4. The emitter terminal should be connected to the ground terminal of

the 3 terminal capacitance bridge.

California Eastern Laboratories

12 3 4 5 6 7...12

中文翻译

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与NE686相关器件

型号	品牌	获取价格	描述	数据表
NE68618	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 3V V(BR)CEO \| 10MA I(C) \| SOT-343R
NE68618-T1	NEC	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68618-T1-A	CEL	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68618-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, C Band, Silicon, NPN
NE68619	NEC	获取价格	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-90
NE68619-T1	NEC	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68619-T1-A	CEL	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68630	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC,
NE68630-T1	CEL	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68630-T1	NEC	获取价格	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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