Datasheet > 晶体管 > 射频小信号双极晶体管> NE68139-T1

NE68139-T1

更新时间： 2024-09-23 22:45:23

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
20页	219K
描述
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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数据手册

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NE68139-T1 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE681

SERIES

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz

• LOW NOISE FIGURE:

1.2 dB at 1 GHz

1.6 dB at 2 GHz

• HIGH ASSOCIATED GAIN:

15 dB at 1 GHz

12 dB at 2 GHz

• LOW COST

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE681 series of NPN epitaxial silicon transistors are

designed for low noise, high gain, low cost amplifier applica-

tions. Both the chip and micro-x versions are suitable for

amplifier applications up to 4 GHz. The NE681 die is also

available in six different low cost plastic surface mount pack-

age styles. NE681's unique device characteristics allow you to

useasinglematchingpointtosimultaneouslyachievebothlow

noise and high gain.

19 (3 PIN ULTRA

SUPER MINI MOLD)

18 (SOT 343 STYLE)

30 (SOT 323 STYLE)

39 (SOT 143 STYLE)

33 (SOT 23 STYLE)

NOISE FIGURE, GAIN MSG

AND MAG vs. FREQUENCY

CE = 3 V, IC = 5 mA

MSG

MAG

3.0

39R (SOT 143R STYLE)

2.0

1.0

0.5

1.0

2.0

3.0

Frequency, f (GHz)

12 3 4 5 6 7...20

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