生命周期: | Transferred | 包装说明: | LEAD FREE, PLASTIC PACKAGE-4 |
Reach Compliance Code: | unknown | 风险等级: | 5.75 |
其他特性: | LOW NOISE | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.065 A | 基于收集器的最大容量: | 0.8 pF |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最高频带: | S BAND | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e6 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 9000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE68139-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil | |
NE681M03 | CEL |
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NECs NPN SILICON TRANSISTOR | |
NE681M03-A | CEL |
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NECs NPN SILICON TRANSISTOR | |
NE681M03-T1-A | CEL |
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NECs NPN SILICON TRANSISTOR | |
NE681M13 | CEL |
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NECs NP SILICON TRANSISTOR | |
NE681M13-A | CEL |
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NECs NP SILICON TRANSISTOR | |
NE681M13-T3-A | CEL |
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NECs NP SILICON TRANSISTOR | |
NE681M23 | NEC |
获取价格 |
NPN SILICON TRANSISTOR | |
NE68330 | ETC |
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TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5MA I(C) | |
NE68333 | ETC |
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TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5A I(C) |