Datasheet > NE68139R-T1

NE68139R-T1

更新时间： 2024-11-15 02:58:59

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
21页	627K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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技术参数
数据手册

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NE68139R-T1 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	7.81
其他特性：	LOW NOISE	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	0.065 A	基于收集器的最大容量：	0.8 pF
集电极-发射极最大电压：	10 V	配置：	SINGLE
最小直流电流增益 (hFE)：	50	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G4	元件数量：	1
端子数量：	4	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	9000 MHz	Base Number Matches：	1

NE68139R-T1 数据手册

SILICON TRANSISTOR

NE681 SERIES

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz

• LOW NOISE FIGURE:

1.2 dB at 1 GHz

1.6 dB at 2 GHz

• HIGH ASSOCIATED GAIN:

15 dB at 1 GHz

12 dB at 2 GHz

35 (MICRO-X)

00 (CHIP)

• LOW COST

DESCRIPTION

NEC's NE681 series of NPN epitaxial silicon transistors are

designed for low noise, high gain, low cost amplifier applica-

tions. Both the chip and micro-x versions are suitable for

amplifier applications up to 4 GHz. The NE681 die is also

available in six different low cost plastic surface mount pack-

age styles. NE681's unique device characteristics allow you to

useasinglematchingpointtosimultaneouslyachievebothlow

noise and high gain.

19 (3 PIN ULTRA

SUPER MINI MOLD)

18 (SOT 343 STYLE)

30 (SOT 323 STYLE)

39 (SOT 143 STYLE)

33 (SOT 23 STYLE)

NOISE FIGURE, GAIN MSG

AND MAG vs. FREQUENCY

CE = 3 V, IC = 5 mA

MSG

MAG

3.0

39R (SOT 143R STYLE)

2.0

1.0

0.5

1.0

2.0

3.0

Frequency, f (GHz)

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 28, 2005

12 3 4 5 6 7...21

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与NE68139R-T1相关器件

型号	品牌	获取价格	描述	数据表
NE68139R-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN, LEAD FRE
NE68139R-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
NE68139-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68139-T1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68139-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68139-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN, LEAD FRE
NE68139-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
NE681M03	CEL	获取价格	NECs NPN SILICON TRANSISTOR
NE681M03-A	CEL	获取价格	NECs NPN SILICON TRANSISTOR
NE681M03-T1-A	CEL	获取价格	NECs NPN SILICON TRANSISTOR