Datasheet > NE68135-A

NE68135-A

更新时间： 2024-09-24 19:52:51

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
21页	625K
描述
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, MICRO-X-4

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技术参数
数据手册

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NE68135-A 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, MICRO-X-4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.4	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.065 A	基于收集器的最大容量：	0.7 pF
集电极-发射极最大电压：	10 V	配置：	SINGLE
最高频带：	S BAND	JESD-30 代码：	O-CRDB-F4
JESD-609代码：	e6	元件数量：	1
端子数量：	4	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	ROUND	封装形式：	DISK BUTTON
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	RADIAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	9000 MHz	Base Number Matches：	1

NE68135-A 数据手册

SILICON TRANSISTOR

NE681 SERIES

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz

• LOW NOISE FIGURE:

1.2 dB at 1 GHz

1.6 dB at 2 GHz

• HIGH ASSOCIATED GAIN:

15 dB at 1 GHz

12 dB at 2 GHz

35 (MICRO-X)

00 (CHIP)

• LOW COST

DESCRIPTION

NEC's NE681 series of NPN epitaxial silicon transistors are

designed for low noise, high gain, low cost amplifier applica-

tions. Both the chip and micro-x versions are suitable for

amplifier applications up to 4 GHz. The NE681 die is also

available in six different low cost plastic surface mount pack-

age styles. NE681's unique device characteristics allow you to

useasinglematchingpointtosimultaneouslyachievebothlow

noise and high gain.

19 (3 PIN ULTRA

SUPER MINI MOLD)

18 (SOT 343 STYLE)

30 (SOT 323 STYLE)

39 (SOT 143 STYLE)

33 (SOT 23 STYLE)

NOISE FIGURE, GAIN MSG

AND MAG vs. FREQUENCY

CE = 3 V, IC = 5 mA

MSG

MAG

3.0

39R (SOT 143R STYLE)

2.0

1.0

0.5

1.0

2.0

3.0

Frequency, f (GHz)

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 28, 2005

12 3 4 5 6 7...21

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