是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.76 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.065 A | 基于收集器的最大容量: | 0.9 pF |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最高频带: | S BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 9000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE68133-T1B-R35-A | RENESAS |
获取价格 |
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC PACKAGE-3 | |
NE68133-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil | |
NE68135 | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE68135 | NEC |
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NONLINEAR MODEL | |
NE68135-A | NEC |
获取价格 |
暂无描述 | |
NE68135-A | RENESAS |
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S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, MICRO-X-4 | |
NE68135-T1 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN | |
NE68135-T2 | CEL |
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RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN | |
NE68137 | ETC |
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TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | MACRO-X | |
NE68139 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil |