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NE68133-T1B-R34-A PDF预览

NE68133-T1B-R34-A

更新时间: 2024-11-15 19:52:51
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管晶体管
页数 文件大小 规格书
21页 625K
描述
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC PACKAGE-3

NE68133-T1B-R34-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.76其他特性:LOW NOISE
最大集电极电流 (IC):0.065 A基于收集器的最大容量:0.9 pF
集电极-发射极最大电压:10 V配置:SINGLE
最高频带:S BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):9000 MHz
Base Number Matches:1

NE68133-T1B-R34-A 数据手册

 浏览型号NE68133-T1B-R34-A的Datasheet PDF文件第2页浏览型号NE68133-T1B-R34-A的Datasheet PDF文件第3页浏览型号NE68133-T1B-R34-A的Datasheet PDF文件第4页浏览型号NE68133-T1B-R34-A的Datasheet PDF文件第5页浏览型号NE68133-T1B-R34-A的Datasheet PDF文件第6页浏览型号NE68133-T1B-R34-A的Datasheet PDF文件第7页 
SILICON TRANSISTOR  
NE681 SERIES  
NEC's NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
FEATURES  
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz  
E
• LOW NOISE FIGURE:  
1.2 dB at 1 GHz  
B
1.6 dB at 2 GHz  
• HIGH ASSOCIATED GAIN:  
15 dB at 1 GHz  
12 dB at 2 GHz  
35 (MICRO-X)  
00 (CHIP)  
• LOW COST  
DESCRIPTION  
NEC's NE681 series of NPN epitaxial silicon transistors are  
designed for low noise, high gain, low cost amplifier applica-  
tions. Both the chip and micro-x versions are suitable for  
amplifier applications up to 4 GHz. The NE681 die is also  
available in six different low cost plastic surface mount pack-  
age styles. NE681's unique device characteristics allow you to  
useasinglematchingpointtosimultaneouslyachievebothlow  
noise and high gain.  
19 (3 PIN ULTRA  
SUPER MINI MOLD)  
18 (SOT 343 STYLE)  
30 (SOT 323 STYLE)  
39 (SOT 143 STYLE)  
33 (SOT 23 STYLE)  
NOISE FIGURE, GAIN MSG  
AND MAG vs. FREQUENCY  
V
CE = 3 V, IC = 5 mA  
MSG  
20  
10  
0
MAG  
3.0  
39R (SOT 143R STYLE)  
2.0  
1.0  
G
A
NF  
0.5  
1.0  
2.0  
3.0  
Frequency, f (GHz)  
The information in this document is subject to change without notice. Before using this document, please confirm  
that this is the latest version.  
Date Published: June 28, 2005  

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