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NE68039-T1 PDF预览

NE68039-T1

更新时间: 2024-01-03 01:00:20
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
19页 247K
描述
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NE68039-T1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.79
最大集电极电流 (IC):0.035 A配置:Single
最小直流电流增益 (hFE):50最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

NE68039-T1 数据手册

 浏览型号NE68039-T1的Datasheet PDF文件第1页浏览型号NE68039-T1的Datasheet PDF文件第2页浏览型号NE68039-T1的Datasheet PDF文件第3页浏览型号NE68039-T1的Datasheet PDF文件第5页浏览型号NE68039-T1的Datasheet PDF文件第6页浏览型号NE68039-T1的Datasheet PDF文件第7页 
NE680 SERIES  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
NE68033  
NOISE FIGURE vs. COLLECTOR  
CURRENT  
FORWARD CURRENT GAIN  
vs. COLLECTOR CURRENT  
500  
5
4
3
2
1
0
VCE = 6 V  
V
CE = 6 V  
f = 2 GHz  
300  
200  
100  
70  
50  
30  
20  
10  
1
2
3
5
7
10  
20  
1
2
3
5
7
10  
20 30 50  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE68035  
GAIN BANDWIDTH PRODUCT vs.  
COLLECTOR CURRENT  
NOISE FIGURE  
vs. COLLECTOR CURRENT  
5
4
10  
V
CE = 6 V  
V
CE = 6 V  
7
5
f = 4 GHz  
3
2
3
2
f = 2 GHz  
1
0
1
1
2
3
5
7
10  
20  
1
2
3
5
7
10  
20  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
COLLECTOR TO BASE CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
5
3
2
1
0.7  
0.5  
0.3  
0.2  
NE68033  
NE68035  
0.1  
1
2
3
5
7
10  
20 30  
50  
Collector to Base Voltage, VCB (V)  

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