生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.83 |
其他特性: | LOW NOISE | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.035 A | 基于收集器的最大容量: | 0.8 pF |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | 最高频带: | S BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NE68039-T1 | NEC | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
获取价格 |
|
NE68039-T1-A | RENESAS | TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-143 |
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|
NE68039-T2 | CEL | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN |
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|
NE680M03 | NEC | NPN SILICON TRANSISTOR |
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|
NE681 | CEL | NPN SILICON HIGH FREQUENCY TRANSISTOR |
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|
NE681 | NEC | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
获取价格 |